Resist Composition Quencher for EUV Lithography Resolution
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Solution Overview
Problem
In EUV lithography, the reduction of pattern feature size leads to lower light contrast, resulting in decreased resolution and focus margin due to acid diffusion in resist films, which is challenging to control without compromising sensitivity.
Innovation Solution
Incorporating a 2,5,8,9-tetraaza-1-phosphabicyclo[3.3.3]undecane, biguanide or phosphazene salt of an iodized aromatic group-containing N-carbonylsulfonamide into the resist composition to enhance sensitization and suppress acid diffusion, thereby improving resolution and critical dimension uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the pattern feature size is reduced to increase integration density, then the manufacturing precision improves, but the light contrast lowers causing resolution and focus margin reduction
Solution Approach 1:
The patent changes the chemical parameters of the resist system by introducing a novel quencher molecule with specific functional groups (carboxyl, hydroxyl, or amine) and specific molecular weight range (100-1000). This parameter change optimizes the interaction between the quencher and photo-generated acid, thereby improving dissolution contrast and resolution without requiring changes to the physical illumination parameters
Solution Approach 2:
The patent introduces a quencher as an intermediary substance that mediates between the photoacid generator and the resist polymer. The quencher controls acid diffusion through chemical interaction, acting as a mediator that enhances the effectiveness of the lithography process at reduced feature sizes without directly altering the light exposure parameters
2Manufacturing precision
If quenchers are added to control acid diffusion and improve contrast, then the manufacturing precision improves, but the sensitivity of the resist composition deteriorates
Solution Approach 1:
The patent optimizes the molecular weight parameter of the quencher within a specific range (100-1000) and controls the concentration at 0.01-10% by weight relative to the resist polymer. These parameter changes balance the quencher's acid diffusion control capability with its impact on sensitivity, ensuring effective acid confinement without excessive quenching that would reduce sensitivity
Solution Approach 2:
The patent applies local quality by having the quencher distributed throughout the resist composition to provide localized acid diffusion control. The quencher molecules are positioned within the resist matrix to create localized zones of acid neutralization, providing precise spatial control over acid diffusion while maintaining overall resist sensitivity
3Manufacturing precision
If conventional quenchers are used to suppress acid diffusion, then the manufacturing precision improves, but the line width roughness increases
Solution Approach 1:
The patent specifies particular functional groups (carboxyl, hydroxyl, or amine) and molecular weight range for the quencher to optimize its interaction characteristics with photo-generated acid. These parameter changes ensure smooth and uniform acid diffusion suppression, preventing localized variations that would cause line width roughness while maintaining effective acid diffusion control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves high sensitivity, minimal line width roughness, and improved critical dimension uniformity while maintaining film thickness, effectively overcoming the tradeoff between sensitivity and resolution.
Implementation Method 1
The quencher is readily decomposed upon EUV exposure due to the substantial EUV absorption of iodine
Implementation Method 2
Chemically amplified resist compositions comprising an acid generator capable of generating an acid upon exposure to light or EB
Implementation Method 3
Quenchers are often added to these resist compositions for the purpose of controlling the diffusion of the acid to unexposed region to improve the contrast
Data Source
AI summary
A resist composition is provided comprising a base polymer and a 2,5,8,9-tetraaza-1-phosphabicyclo[3.3.3]undecane, biguanide or phosphazene salt of an iodized aromatic group-containing N-carbonysulfonamide. The salt is effective for sensitizing and suppressing acid diffusion and prevents any film thickness loss after development. The resist composition is improved in resolution, LWR and CDU when a pattern is formed therefrom by lithography.