Low Molecular Weight Resist Resin for Lithography Underlayer Films
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Solution Overview
Problem
Conventional polymer-based resist materials face limitations in miniaturization due to roughness and pattern control issues, and existing low molecular weight resist materials lack sufficient heat resistance and solubility for semiconductor production, while underlayer films for lithography require both high heat and etching resistance with solubility for wet processing.
Innovation Solution
A compound with a specific structure, represented by formulas (1) to (1d), is used to create a resin with high solubility and heat resistance, incorporated into a resist composition for forming amorphous films and underlayer films, which includes an acid dissociation group and is suitable for wet processing, along with an acid generating agent and crosslinking agent for improved pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If polymer-based resist materials are used, then the resist material can form amorphous thin films, but the pattern surface roughness increases and pattern dimension control becomes difficult
Solution Approach 1:
The patent changes the molecular weight parameter from high (10,000-100,000 for polymer-based) to low (100-10,000 for low molecular weight resist materials). This parameter change reduces the molecular size, which directly decreases pattern surface roughness and improves pattern dimension control, resolving the technical contradiction between manufacturing precision and reliability.
2Manufacturing precision
If low molecular weight resist materials are used, then the pattern resolution and roughness improve, but the heat resistance becomes insufficient
Solution Approach 1:
The patent uses composite materials by combining low molecular weight resist materials with specific resin components and additives that provide heat resistance. This composite approach maintains the resolution and roughness benefits of low molecular weight materials while compensating for their insufficient heat resistance through synergistic material combinations.
3Reliability
If low molecular weight resist materials are used, then the pattern roughness decreases, but the solubility for wet processing becomes insufficient
Solution Approach 1:
The patent changes the chemical structure parameters of the resist materials by introducing specific functional groups and molecular structures that enhance solubility in wet processing solvents. This allows low molecular weight materials to maintain both low roughness and improved solubility for effective wet processing.
4Strength
If underlayer films are formed for lithography, then the etching resistance improves, but the solubility for wet processing must be maintained
Solution Approach 1:
The patent applies local quality by creating an underlayer film with specific spatial and chemical properties - the film has high etching resistance where needed for pattern transfer, while maintaining solubility in wet processing solvents through specific chemical group distributions. This localized property distribution resolves the contradiction between etching resistance and solubility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The compound and resin composition provide high solubility, heat resistance, and improved resist pattern formation with reduced roughness, enabling effective underlayer film formation for lithography and semiconductor production.
Implementation Method 1
a purification method comprising the steps of: obtaining a solution (S) by dissolving the compound represented by formula (1) and/or the resin in a solvent; and extracting impurities in the compound and/or the resin by bringing the obtained solution (S) into contact with an acidic aqueous solution
Data Source
AI summary
The present invention employs a compound represented by the following formula (1) and/or a resin comprising the compound as a constituent:wherein R1 is a 2n-valent group of 1 to 60 carbon atoms or a single bond; R2 to R5 are each independently a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a halogen atom, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group, provided that at least one selected from R2 to R5 is a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group; m2 and m3 are each independently an integer of 0 to 8; m4 and m5 are each independently an integer of 0 to 9, provided that m2, m3, m4, and m5 are not 0 at the same time; n is an integer of 1 to 4; and p2 to p5 are each independently an integer of 0 to 2.