Resist Resin Composition for Stable Low Line Width Roughness
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
There is a demand for resist compositions with high initial and temporal line width roughness (LWR) performance, especially in the formation of ultrafine patterns in semiconductor devices, as existing compositions may degrade over time, affecting pattern quality.
Innovation Solution
An actinic ray-sensitive or radiation-sensitive resin composition containing specific onium salts without fluorine atoms, which includes a sulfonate anion and a particular structural formula, enhancing compatibility and dispersion of acids, thereby maintaining high LWR performance both initially and over time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If conventional resist compositions are stored for a certain period of time, then storage stability is improved, but line width roughness performance deteriorates
Solution Approach 1:
The patent modifies the chemical composition parameters of the resist system by introducing a specific base compound with a given molecular structure and introducing a photoacid generator with specific properties (pKa value between 0 and 5, containing fluorine atoms). This parameter optimization enables the resist to maintain high LWR performance both immediately after preparation and after storage, resolving the contradiction between storage stability and line width roughness performance.
Solution Approach 2:
The patent creates a composite resist system combining multiple components: the base compound with specific molecular structure, the photoacid generator with fluorine-containing groups, and a resin with controlled functionality. This composite formulation achieves synergistic effects that maintain pattern quality over time, simultaneously improving storage stability and preserving line width roughness performance.
2Manufacturing precision
If fluorine-containing compounds are used to improve initial LWR performance, then initial line width roughness performance is improved, but temporal stability deteriorates
Solution Approach 1:
The patent optimizes the concentration and molecular structure of fluorine-containing compounds, specifically using photoacid generators with controlled fluorine content and specific molecular structures. By adjusting these parameters, the resist achieves high initial LWR performance while maintaining temporal stability, as the fluorine-containing compounds are designed to be stable over time rather than degrading.
3Measurement precision
If acid generators with high acid strength are used, then pattern resolution is improved, but line width roughness performance deteriorates
Solution Approach 1:
The patent carefully controls the acid strength parameter of the photoacid generator by selecting compounds with specific pKa values (between 0 and 5). This optimized acid strength range enables sufficient pattern resolution while avoiding excessive acid strength that would cause poor line width roughness performance. The molecular structure of the acid generator is also optimized to achieve this balance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition provides high initial and temporal LWR performance, ensuring consistent pattern quality and stability over time, suitable for advanced semiconductor manufacturing processes.
Implementation Method 1
an onium salt (A) including a sulfonate anion and not including a fluorine atom and a structure represented by a formula (Am-1) below, which is irradiated with an actinic ray or a radiation to generate an acid
Implementation Method 2
a resin which provides increased polarity by action of an acid
Implementation Method 3
enhancing compatibility and dispersion of acids, thereby maintaining high LWR performance both initially and over time
Data Source
AI summary
An actinic ray-sensitive or radiation-sensitive resin composition containing a resin which provides increased polarity by action of an acid, an onium salt (A) including a sulfonate anion and not including a fluorine atom, and an onium salt (B) including a specified structure and not including a fluorine atom, a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method using the actinic ray-sensitive or radiation-sensitive resin composition, and a method for producing an electronic device.