Resist Composition Salt for Semiconductor CD Uniformity
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Solution Overview
Problem
Existing resist compositions for semiconductor fine processing struggle to achieve uniform critical dimension (CD) uniformity in resist patterns.
Innovation Solution
A salt represented by formula (I) is used in an acid generator, which forms a resist composition that includes a resin with specific structural units, enhancing CD uniformity through its unique chemical structure and application process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist compositions are used for semiconductor fine processing, then the basic resist pattern formation is achieved, but the critical dimension (CD) uniformity of the resist pattern is insufficient
Solution Approach 1:
The patent modifies the chemical structure of the acid generator by introducing specific structural units (formula I) with varying parameters such as R1 (halogen, cyano, nitro, haloalkyl, or hydrocarbon groups), m1 (integer 0-4), X1 (different bonding groups), L1 and L2 (hydrocarbon groups with 1-28 carbon atoms), and Ar (aromatic hydrocarbon groups with 6-36 carbon atoms). These parameter changes in the molecular structure enable improved CD uniformity while maintaining resist pattern quality.
Solution Approach 2:
The patent creates a composite acid generator structure by combining multiple functional groups within formula (I), including ZI+ (organic cation), the core structural unit with R1, X1, L1, L2, Ar groups, and additional substituents (R5, X0). This composite molecular architecture achieves both satisfactory CD uniformity and reliable resist pattern formation.
2Manufacturing precision
If the resist composition is optimized for CD uniformity, then the precision of semiconductor processing is improved, but the complexity of the composition increases
Solution Approach 1:
The patent achieves improved processing precision by systematically varying parameters within a defined framework (formula I) rather than introducing entirely new complex structures. The parameters R1, m1, X1, L1, L2, and Ar provide a structured approach to optimization that balances precision improvement with compositional manageability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition using the salt achieves satisfactory CD uniformity in resist patterns, improving the precision and quality of semiconductor processing.
Implementation Method 1
an acid generator which is used for fine processing of semiconductors
Data Source
AI summary
Disclosed are a salt represented by formula (I), an acid generator, a resin and a resist composition:wherein R1 represents a halogen atom, a cyano group, a nitro group, a haloalkyl group or a hydrocarbon group; m1 represents an integer of 0 to 4; X1 represents *—CO—O—, *—O—CO—, etc.; L1 and L2 each represent a single bond or a substituted/unsubstituted hydrocarbon group; Ar represents a substituted/unsubstituted aromatic hydrocarbon group; X0 represents a single bond, *—O—**, *—CO—O—**, *—O—CO—O—**, etc., in which when L2 is a single bond, X0 is not a single bond; R5 represents a hydrogen atom, a halogen atom, or an alkyl group which may have a halogen atom; and ZI+ represents an organic cation.