Resist Region Segmentation for Precise Substrate Pattern Development
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Solution Overview
Problem
Existing substrate processing methods face challenges in efficiently removing parts of a resist film to expose underlying surfaces while forming and removing deposited films, which affects the precision and quality of pattern development on semiconductor substrates.
Innovation Solution
A substrate processing method involving steps: providing a substrate with an underlying film and a resist film having distinct regions, removing part of the resist film to expose the underlying film, forming a deposited film on the exposed region, and then removing parts of the deposited film and the resist film to achieve the desired pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a resist film is removed to expose the underlying film, then the pattern development precision is improved, but the complexity of the processing steps increases
Solution Approach 1:
The resist film is divided into a first region and a second region with different properties. The first region is designed to be removed easily to expose the underlying film, while the second region remains as a mask. This segmentation allows selective removal of resist portions to achieve precise pattern development without requiring complex multi-step processing.
Solution Approach 2:
The resist film is pre-patterned into regions with different removal characteristics before the actual etching process. By performing this preliminary segmentation during resist formation, the subsequent processing steps are simplified, as the selective removal behavior is already established, reducing the need for complex intermediate processing steps.
2Manufacturing precision
If a deposited film is formed on the resist film, then the pattern quality is improved, but the processing time increases
Solution Approach 1:
The deposited film is formed selectively on specific regions of the resist film where pattern quality enhancement is needed. By applying the deposited film only locally rather than uniformly across the entire substrate, the processing time is reduced while still achieving the desired pattern quality improvement in critical areas.
3Manufacturing precision
If excess film layers are removed, then the pattern accuracy is improved, but the risk of damaging the underlying film increases
Solution Approach 1:
The removal characteristics of different resist regions are controlled by adjusting parameters such as composition, thickness, or cross-linking density. The first region is designed with parameters that enable easy removal, while the second region has parameters that provide protective functionality. This parameter optimization allows selective removal of excess film layers with high pattern accuracy while maintaining underlying film integrity through controlled selectivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the precision and quality of pattern development by effectively exposing the underlying film and removing excess film layers, thereby improving the accuracy and reliability of semiconductor substrate processing.
Implementation Method 1
forming a deposited film on at least an upper surface of the first region
Implementation Method 2
forming a deposited film on at least an upper surface of the first region
Data Source
AI summary
A substrate processing method according to an aspect of the present disclosure including: (a) providing a substrate having an underlying film and a resist film on the underlying film, the resist film including a first region and a second region; (b) removing at least a part of the second region to expose at least a part of a side surface of the first region; (c) forming a deposited film on at least an upper surface of the first region; and (d) removing at least a part of the deposited film and at least a part of the second region.