Resist Pattern Slimming via Expansive Agent

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Solution Overview

Problem

Conventional semiconductor device manufacturing processes face challenges in precisely controlling the slimming of resist patterns due to optical conditions and resist species, leading to potential height reduction during the slimming process.

Innovation Solution

A method and apparatus that utilize an expansive agent coated on the substrate, expanded to physically press and narrow the resist patterns, followed by solvent removal to maintain precision and prevent height loss, regardless of optical conditions and resist species.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Length of moving object

If liquid chemicals are used to modify sidewalls of resist pattern for slimming, then the line width can be reduced, but the manufacturing precision of slimming process becomes difficult to control and resist height decreases

Engineering Contradiction:

Improveline widthVSAvoidslimming control precision

Core Design Contradiction:

Length of moving objectVSManufacturing precision

Solution Approach 1:

The patent changes the fundamental parameter of the slimming mechanism from chemical modification to physical expansion. By using an expansive agent that undergoes volume expansion (parameter change) to push the resist sidewalls inward, the process achieves precise control over the slimming amount independent of optical conditions and resist species, while maintaining resist height.

Inventive Principle:

Principle #35Parameter changes

2Length of moving object

If liquid chemicals are used to modify sidewalls of resist pattern for slimming, then the line width can be reduced, but the resist height decreases

Engineering Contradiction:

Improveline widthVSAvoidresist height

Core Design Contradiction:

Length of moving objectVSLength of stationary object

Solution Approach 1:

The expansive agent serves as an intermediary substance that mediates the slimming process. Instead of directly removing resist material with liquid chemicals, the expansive agent is coated between the substrate and resist pattern, expands to push sidewalls inward, and is then removed. This intermediary approach achieves line width reduction while preserving resist height.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Length of moving object

If conventional slimming process is used, then line width can be reduced, but the process control becomes dependent on optical conditions and resist species

Engineering Contradiction:

Improveline widthVSAvoidprocess control independence

Core Design Contradiction:

Length of moving objectVSAdaptability or versatility

Solution Approach 1:

The patent replaces the optical/chemical-based slimming mechanism with a mechanical expansion mechanism. The expansive agent undergoes physical expansion to mechanically push the resist sidewalls inward, creating a slimming effect that is independent of optical conditions and resist species, thereby improving process control versatility.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for precise control of the slimming process, ensuring consistent line widths and preventing height reduction of resist patterns, enhancing the precision and reliability of semiconductor device manufacturing.

Implementation Method 1

expanding the expansive agent

Methodology Applied

Scientific EffectPhysical expansion: Thermal Expansion

Implementation Method 2

removing the expanded expansive agent

Methodology Applied

Scientific EffectSolvent removal: Solvation

Data Source

PatentUS8530357B2Method for manufacturing semiconductor device and apparatus for manufacturing semiconductor device

Publication Date: 2013.09.10 TOKYO ELECTRON LTD

AI summary

A method of manufacturing a semiconductor device, which includes forming a resist layer on a substrate, performing an exposure and development process on the resist layer to form a resist pattern, performing a slimming process to slim the resist pattern, forming a mask material layer on side walls of the slimmed resist pattern, and removing the slimmed resist pattern. The slimming process further includes coating an extensive agent on the substrate, expanding the expansive agent, and removing the expanded expansive agent.