Resist Solvent Composition Using Trace High-Boiling Impurities
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Solution Overview
Problem
Existing solutions for semiconductor device manufacturing fail to provide adequate defect inhibition, particularly when using compositions with high-boiling point impurities, leading to substrate defects.
Innovation Solution
A solution comprising an organic solvent as the main component (≥98% by mass) along with an organic impurity having a boiling point ≥250°C in trace amounts (0.1-100 mass ppm), which effectively inhibits defects in semiconductor device manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a composition containing high-boiling point impurity is used as solvent, then the defect inhibition ability is insufficient, but the manufacturing cost and purity requirements increase
Solution Approach 1:
The patent applies parameter changes by precisely controlling the concentration of high-boiling point impurities within a specific range (0.1-100 mass ppm) rather than simply eliminating them. This quantitative parameter optimization resolves the contradiction by finding the optimal impurity level that provides sufficient defect inhibition while meeting purity requirements.
Solution Approach 2:
The patent converts the harmful effect of high-boiling point impurities into a beneficial effect by intentionally maintaining them within a controlled concentration range. The impurities, which would normally be considered contaminants to be removed, are instead utilized as defect-inhibiting agents, transforming the harmful factor into a useful component.
2Reliability
If the organic impurity content is increased to improve defect inhibition, then the solution purity decreases, but if purity is increased by removing impurities, then defect inhibition ability decreases
Solution Approach 1:
The patent resolves this contradiction by changing the parameter of impurity concentration from a binary state (present/absent) to a controlled continuous variable within 0.1-100 mass ppm. This parameter optimization allows the solution to simultaneously achieve high purity (≥98% organic solvent) and effective defect inhibition.
Solution Approach 2:
The patent transforms the typically harmful impurities into beneficial defect-inhibiting agents by controlling their concentration within a specific range. The high-boiling point organic impurities, which would normally reduce solution purity, are instead maintained at optimal levels to provide defect inhibition, converting a negative factor into a positive one.
Data Source
AI summary
An object of the present invention is to provide a solution which contains an organic solvent as a main component (content: equal to or greater than 98% by mass) and has an excellent defect inhibition ability.Another object of the present invention is to provide a solution storage body storing the solution, an actinic ray-sensitive or radiation-sensitive resin composition containing the solution, and a pattern forming method and a manufacturing method of a semiconductor device using the solution.The solution of the present invention is a solution containing at least one kind of organic solvent having a boiling point lower than 200° C. and an organic impurity having a boiling point equal to or higher than 250° C., in which a content of the organic solvent with respect to a total mass of the solution is equal to or greater than 98% by mass, and a content of the organic impurity with respect to the total mass of the solution is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.