Positive Resist Splitting Agent for High Resolution Patterning
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Solution Overview
Problem
Current methods for forming fine resist patterns in lithography techniques are complex and require multiple exposure steps, limiting the simplicity and effectiveness of the process.
Innovation Solution
A method involving a positive resist composition applied to a substrate, exposed, and then developed with an alkali solution, followed by application of an acid or thermoacid generator solution to change solubility in an organic solvent, allowing for the removal of unwanted resist pattern regions, thereby simplifying the process and improving pattern resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple exposure steps are used to form fine resist patterns, then pattern resolution is improved, but process complexity increases
Solution Approach 1:
The patent divides the patterning process into two distinct stages: first forming a mandrel pattern, then using it to create the final fine pattern through selective removal. This segmentation allows each stage to be optimized independently, achieving high resolution without requiring multiple exposure steps of the same complexity
Solution Approach 2:
The patent introduces a mandrel pattern as an intermediary structure that mediates between the initial exposure and the final fine pattern. This intermediary element simplifies the overall process by serving as a template for subsequent pattern formation, reducing the need for complex multi-step exposures
2Manufacturing precision
If multiple exposure steps are used to form fine resist patterns, then pattern resolution is improved, but processing time increases
Solution Approach 1:
The patent performs preliminary action by first forming the mandrel pattern structure before creating the final fine pattern. This preliminary structure serves as a foundation that accelerates subsequent pattern formation, reducing the total time required compared to multiple sequential exposure steps
3Device complexity
If a simple single exposure process is used, then process complexity is reduced, but pattern resolution deteriorates
Solution Approach 1:
The patent transitions from a two-dimensional exposure process to a three-dimensional approach by forming vertical mandrel structures. This dimensional change enables single-exposure high-resolution patterning by utilizing the vertical dimension for pattern definition, thereby maintaining process simplicity while achieving superior resolution
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of fine resist patterns through a simplified process, enhancing pattern resolution and reducing the complexity of multiple exposure steps.
Implementation Method 1
the solubility of the first resist pattern in an organic solvent is changed under action of the acid or under action of acid generated from the thermoacid generator
Implementation Method 2
the structure is heated and the solubility of the first resist pattern in an organic solvent is changed under action of the acid or under action of acid generated from the thermoacid generator
Data Source
AI summary
A method of forming a resist pattern, including: a step A in which a positive resist composition is applied to a substrate to form a positive resist film, the positive resist film is exposed and the positive resist film is subjected to an alkali development to form a first resist pattern; a step B in which a solution containing an acid or a thermoacid generator is applied to the substrate whereon the first resist pattern is formed, so as to cover the first resist pattern, to form a structure having the first resist pattern and a first layer covering the first resist pattern; a step C in which the structure is heated and the solubility of the first resist pattern in an organic solvent is changed under action of the acid or under action of acid generated from the thermoacid generator; and a step D in which the structure after heating is developed with the organic solvent to remove a region of the first resist pattern other than the region of the first resist pattern where the solubility in the organic solvent is changed, so as to form a second resist pattern.