Resist Stripping Composition for 3D IC Manufacturing
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Solution Overview
Problem
Current resist stripping compositions for semiconductor manufacturing face challenges such as environmental, health, and safety concerns, damage to low-k and ultra low-k materials, inconsistent removal rates for different materials, and the need for pre-treatment steps, especially when dealing with complex etch residues and 3D technologies.
Innovation Solution
A novel resist stripping composition free from N-alkylpyrrolidones and hydroxyl amine derivatives, with a dynamic shear viscosity of 1 to 10 mPas, comprising 40 to 99.95% polar organic solvent, 0.05 to <0.5% quaternary ammonium hydroxide, and <5% water, which allows for consistent removal rates across various materials without pre-treatment and is compatible with 3D technologies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional resist stripping compositions containing N-alkylpyrrolidones and hydroxyl amine derivatives are used, then removal effectiveness is achieved, but environmental, health, and safety concerns arise
Solution Approach 1:
The patent removes harmful substances (N-alkylpyrrolidones and hydroxyl amine derivatives) from the resist stripping composition while maintaining removal effectiveness through alternative safe ingredients, directly addressing the EHS concerns without sacrificing performance
Solution Approach 2:
The patent changes the chemical composition parameters by eliminating harmful solvents and replacing them with safer alternatives, transforming the composition from harmful to safe while preserving the functional properties needed for resist removal
2Reliability
If conventional resist stripping compositions are used, then resist removal is achieved, but damage to low-k and ultra low-k materials occurs
Solution Approach 1:
The patent creates a selectively acting composition that differentiates between resist materials and low-k/ultra low-k dielectric materials, removing only the intended targets while preserving sensitive materials through tailored chemical properties
Solution Approach 2:
The patent converts potentially harmful strong solvents into beneficial selective removers by using milder ingredients that achieve effective resist removal without the collateral damage to low-k materials that conventional strong solvents cause
3Reliability
If conventional resist stripping compositions are used, then removal is achieved, but pre-treatment steps are required
Solution Approach 1:
The patent combines multiple functions (resist removal, residue cleanup, and material protection) into a single stripping composition and process step, eliminating the need for separate pre-treatment steps while maintaining comprehensive effectiveness
Solution Approach 2:
The patent creates a universal stripping composition that handles multiple types of resists, residues, and material protections in one formulation, replacing multiple specialized treatment steps with a single multi-functional solution
4Reliability
If conventional resist stripping compositions are used, then removal is achieved, but inconsistent removal rates occur for different materials
Solution Approach 1:
The patent optimizes composition parameters (solvent types, concentrations, ratios) to achieve uniform removal rates across different resist and material types, transforming inconsistent performance into predictable, controlled removal behavior
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively removes resists, post-etch residues, and barrier anti-reflective layers without damaging low-k materials, offers consistent removal rates, and is safe to handle and use, enabling efficient semiconductor manufacturing without environmental or health hazards.
Implementation Method 1
comprising 40 to 99.95% polar organic solvent
Implementation Method 2
0.05 to <0.5% quaternary ammonium hydroxide
Data Source
AI summary
A liquid composition free from N-alkylpyrrolidones and hydroxyl amine and its derivatives, having a dynamic shear viscosity at 50°C of from 1 to 10 mPas as measured by rotational viscometry and comprising based on the complete weight of the composition, (A) of from 40 to 99.95% by weight of a polar organic solvent exhibiting in the presence of dissolved tetramethylammonium hydroxide (B) a constant removal rate at 50°C for a 30 nm thick polymeric barrier anti-reflective layer containing deep UV absorbing chromophoric groups, (B) of from 0.05 to <0.5% of a quaternary ammonium hydroxide, and (C) <5% by weight of water; method for its preparation, a method for manufacturing electrical devices and its use for removing negative-tone and positive-tone photoresists and post etch residues in the manufacture of 3D Stacked Integrated Circuits and 3D Wafer Level Packagings by way of patterning Through Silicon Vias and/or by plating and bumping.