Resist Stripping Composition for Low-k Material Protection
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Solution Overview
Problem
Current resist stripping compositions for semiconductor manufacturing face challenges such as environmental, health, and safety concerns, damage to low-k and ultra low-k materials, inconsistent removal rates for different materials, and the need for pre-treatment steps like ozone water or hydrogen peroxide, which can harm materials and prolong processing times.
Innovation Solution
A liquid composition comprising polar organic solvents like diethylenetriamine, N-methyl imidazole, 3-amino-1-propanol, and dimethyl sulfoxide, combined with quaternary ammonium hydroxides and aromatic amines, is used for efficient removal of both positive-tone and negative-tone photoresists and post-etch residues without damaging low-k materials or requiring pre-treatment steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional resist stripping compositions are used, then photoresist removal is achieved, but low-k and ultra low-k materials are damaged
Solution Approach 1:
The patent modifies the chemical composition parameters of the resist stripping solution by incorporating specific additives (such as chelating agents, surfactants, and buffered components) that alter the solution's interaction with low-k materials. This allows effective photoresist removal while minimizing damage to the underlying low-k dielectric layers through controlled chemical reactivity.
Solution Approach 2:
The patent introduces intermediary substances (such as buffering agents and protective additives) that mediate between the resist stripping action and the low-k materials. These intermediaries protect the sensitive low-k materials from direct harmful interactions while allowing the resist removal function to proceed effectively.
2Reliability
If pre-treatment steps with ozone water or hydrogen peroxide are used, then resist stripping effectiveness is improved, but processing time increases and material damage occurs
Solution Approach 1:
The patent combines multiple functions (resist stripping, protection of low-k materials, and elimination of pre-treatment requirements) into a single integrated composition. This unified approach eliminates the need for separate pre-treatment steps with ozone water or hydrogen peroxide, reducing processing time while maintaining or improving resist removal effectiveness.
Solution Approach 2:
The patent creates a universal resist stripping composition that performs multiple functions simultaneously: effective photoresist removal, protection of low-k materials, and elimination of pre-treatment steps. This multi-functional composition replaces the need for multiple separate processing steps, thereby reducing overall processing time.
3Reliability
If conventional resist stripping compositions are used, then photoresist removal is achieved, but environmental and health hazards are created
Solution Approach 1:
The patent modifies the chemical parameters of the resist stripping composition by selecting and formulating components with reduced environmental and health hazards. This includes using less toxic solvents, avoiding hazardous additives, and optimizing concentrations to minimize harmful emissions and waste, while maintaining effective photoresist removal performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This composition achieves consistent and efficient removal of resists and post-etch residues across different materials, reduces processing time, and eliminates the need for hazardous pre-treatments, ensuring high-quality semiconductor production without environmental or health hazards.
Implementation Method 1
A liquid composition comprising (A) at least one polar organic solvent selected from the group consisting of diethylenetriamine, N-methyl imidazole, 3-amino-1-propanol, 5-amino-1-pentanol, and dimethyl sulfoxide
Implementation Method 2
(B) at least one quaternary ammonium hydroxide
Data Source
AI summary
A liquid composition comprising (A) at least one polar organic solvent, selected from the group consisting of solvents exhibiting in the presence of from 0.06 to 4% by weight of dissolved tetramethylammonium hydroxide (B), the weight percentage being based on the complete weight of the respective test solution (AB), a constant removal rate at 50°C for a 30 nm thick polymeric barrier anti-reflective layer containing deep UV absorbing chromophoric groups, (B) at least one quaternary ammonium hydroxide, and (C) at least one aromatic amine containing at least one primary amino group, a method for its preparation and a method for manufacturing electrical devices, employing the liquid composition as a resist stripping composition and its use for removing negative- tone and positive-tone photoresists and post etch residues in the manufacture of 3D Stacked Integrated Circuits and 3D Wafer Level Packagings by way of patterning Through Silicon Vias and/or by plating and bumping.