Semiconductor Resist Stripping Liquid for Corrosion and Defect Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing treatment liquids for semiconductor devices corrode metal layers and generate particulate defects, compromising the performance and integrity of semiconductor devices during the manufacturing process.
Innovation Solution
A treatment liquid comprising an organic alkali compound, a corrosion inhibitor, an organic solvent, calcium (Ca), iron (Fe), and sodium (Na), with specific mass ratios and concentrations, is used to reduce corrosion and defects, enhancing the removal of resist residues while maintaining metal layer integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a treatment liquid is used to remove resist film and residues, then the removing capability is improved, but the metal layer is corroded
Solution Approach 1:
A corrosion inhibitor is introduced as an intermediary substance that mediates between the treatment liquid and the metal layer. The corrosion inhibitor forms a protective film on the metal layer, preventing direct contact and chemical reaction between the treatment liquid and metal, thereby eliminating corrosion while maintaining resist removal capability
Solution Approach 2:
The treatment liquid is formulated as a composite composition containing multiple components: organic alkali compound (for resist removal), corrosion inhibitor (for metal protection), and specific additives (Ca, Fe, Na at controlled ratios). This composite formulation enables simultaneous achievement of resist removal and metal layer protection
2Manufacturing precision
If a treatment liquid is used to remove resist residues, then the cleaning effectiveness is improved, but particulate defects are generated
Solution Approach 1:
The concentrations of Ca, Fe, and Na are precisely controlled within specific ranges (Ca: 0.01-10 ppm, Fe: 0.01-10 ppm, Na: 0.1-100 ppm). By optimizing these parameters, the treatment liquid achieves effective resist removal while minimizing particulate defect generation through controlled chemical reactions
Solution Approach 2:
The potential harmful effect of metal ions (Ca, Fe, Na) causing particulate defects is converted into a benefit by carefully controlling their concentrations. At optimized levels, these ions facilitate effective resist removal while their quantity remains insufficient to generate significant particulate contamination
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The treatment liquid effectively reduces defects and corrosion, improving the manufacturing process by ensuring the compatibility and effectiveness of resist removal without damaging metal layers, thus enhancing semiconductor device performance.
Implementation Method 1
a treatment liquid comprising an organic alkali compound, a corrosion inhibitor, an organic solvent, calcium (Ca), iron (Fe), and sodium (Na)
Implementation Method 2
a corrosion inhibitor
Data Source
AI summary
A treatment liquid for a semiconductor device includes an alkanolamine; a hydroxylamine; an organic solvent; Ca; Fe; and Na, wherein the content of the alkanolamine in the treatment liquid is 0.1% to 5% by mass, the content of the hydroxylamine in the treatment liquid is 0.1% to 30% by mass, and each of the mass ratio of Ca, Fe, and Na with respect to the content of the alkanolamine and the hydroxylamine in the treatment liquid is 10−12 to 10−4.