Resist Surface Modification for Lithography Line Width Control
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Solution Overview
Problem
Conventional semiconductor device manufacturing methods fail to adequately control line width and roughness characteristics of resist patterns, particularly in terms of LER, LWR, and CER, which are crucial for high integration and miniaturization of semiconductor devices.
Innovation Solution
A semiconductor device manufacturing method involving a film forming process where a solution or gas with elasticity and no compatibility with the resist is applied to infiltrate and form a film on the resist pattern, followed by a heating process that smoothes the resist pattern, reducing roughness and maintaining line width precision.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photolithography processes are used, then the basic resist pattern formation is achieved, but the line width control and roughness characteristics (LER, LWR, CER) are insufficient
Solution Approach 1:
The patent applies preliminary action by performing surface modification treatment on the resist pattern before the main etching process. A treatment solution containing silane-based compounds or metal organic compounds is applied to the resist surface, allowing these compounds to infiltrate and form a modified surface layer that improves subsequent line width control and reduces roughness characteristics during the etching process.
Solution Approach 2:
The patent employs parameter changes by modifying the chemical composition and physical properties of the resist surface through treatment solutions. The treatment changes parameters such as surface energy, porosity, and chemical reactivity of the resist surface, which directly affect the etching process outcomes including line width precision and edge roughness (LER, LWR, CER).
2Productivity
If the resist pattern is miniaturized for high integration, then device integration density increases, but control of line width and roughness characteristics becomes more difficult
Solution Approach 1:
The patent applies local quality by creating a non-uniform modified layer on the resist surface through controlled infiltration of treatment solutions. The modification is concentrated at the resist surface and near-surface regions where etching occurs, creating localized changes in surface properties that specifically address line width control and roughness reduction at the critical pattern edges without affecting the bulk resist properties.
Solution Approach 2:
The patent uses parameter changes by introducing treatment solutions that modify surface chemical composition and physical structure. The silane-based and metal organic compounds change parameters such as surface porosity, chemical reactivity, and surface energy, which are critical for maintaining precise line width control and minimizing LER/LWR/CER in miniaturized patterns.
3Manufacturing precision
If a film with elasticity and no compatibility with resist is formed by solution or gas infiltration, then roughness characteristics improve, but the process complexity increases
Solution Approach 1:
The patent employs an intermediary approach by introducing treatment solutions containing silane-based compounds or metal organic compounds as a mediating layer between the resist and the etching environment. These compounds infiltrate the resist surface and form a modified layer that acts as an intermediary, improving the etching process outcomes including roughness characteristics without requiring fundamental changes to the existing photolithography or etching equipment.
Solution Approach 2:
The patent applies pneumatic and hydraulic principles by using liquid treatment solutions that are supplied to and infiltrate the resist pattern through capillary action and fluid dynamics. The solution delivery system utilizes controlled fluid flow to ensure uniform distribution of the treatment compounds across the resist surface, forming the elastic modified film that improves roughness characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively improves the roughness and line width characteristics of resist patterns, reducing LER and LWR, thereby enhancing the quality and precision of semiconductor device manufacturing.
Implementation Method 1
by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist
Implementation Method 2
a heating process in which the target object having the film formed thereon is heated
Data Source
AI summary
There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated.