Resist Pattern Thickening Material for ArF Lithography
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Solution Overview
Problem
Conventional resist pattern thickening materials struggle to effectively thicken ArF resist patterns, leading to insufficient dry etch resistance and processability issues, especially when using ArF excimer laser light, and require new chemical agents and complex process setups, limiting their application and productivity.
Innovation Solution
A nonaqueous resist pattern thickening material containing a resin and a compound represented by a specific General Formula, which interacts with the resist pattern to form a surface layer, providing uniform thickening and excellent etch resistance without the need for crosslinking reactions or acid generators, allowing for use with ArF excimer laser light and water or alkaline developers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If conventional resist pattern thickening materials are used to thicken ArF resist patterns, then the resist pattern thickness increases, but the dry etch resistance becomes insufficient and processability deteriorates
Solution Approach 1:
The patent changes the chemical composition parameters of the resist pattern thickening material by incorporating specific compounds (carboxylic acid compounds, hydroxyl compounds, amino compounds) in controlled amounts. This enables the material to achieve both sufficient thickness and excellent dry etch resistance by optimizing the chemical interactions with the ArF resist pattern without requiring crosslinking reactions.
Solution Approach 2:
The patent creates a composite thickening material system combining multiple functional components: carboxylic acid compounds (for chemical interaction with resist), hydroxyl compounds (for hydrogen bonding and adhesion), amino compounds (for additional chemical interaction), and surfactants (for coating uniformity). This composite approach achieves both thickness increase and improved etch resistance simultaneously.
2Manufacturing precision
If new chemical agents and complex process setups are introduced to improve resist pattern thickening, then the thickening effectiveness increases, but the process complexity and manufacturing cost increase
Solution Approach 1:
The patent develops a universal thickening material composition that works effectively with ArF resist patterns using existing lithographic processes. The material can be applied through standard coating equipment and processed with conventional bake and develop steps, eliminating the need for specialized process equipment or novel chemical agents while achieving superior thickening effectiveness.
Solution Approach 2:
The thickening material contains compounds that automatically interact with the ArF resist pattern through chemical reactions (carboxylic acid and amino groups reacting with resist components) during the coating and bake process. This self-service mechanism eliminates the need for additional crosslinking steps or complex process interventions, simplifying the overall manufacturing process.
3Volume of moving object
If crosslinking reactions and acid generators are used to thicken resist patterns, then the thickening effect is achieved, but the process compatibility with ArF excimer laser light and water/alkaline developers is reduced
Solution Approach 1:
The patent extracts and eliminates the need for crosslinking reactions and acid generators from the thickening process. Instead, it uses direct chemical interactions between the thickening material compounds (carboxylic acid, hydroxyl, and amino groups) and the ArF resist pattern, which are compatible with water and alkaline developers, thereby maintaining full process compatibility while achieving effective thickening.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables efficient and uniform thickening of resist patterns, exceeding the resolution limits of available exposure devices, with improved etch resistance and reduced process complexity, enabling cost-effective and high-performance semiconductor manufacturing.
Implementation Method 1
the compound represented by General Formula (1) reacts to a resin (Z) residing near the compound to thereby form a surface layer
Implementation Method 2
the resist pattern thickening material residing near the interface with the resist pattern infiltrates into the resist pattern
Data Source
AI summary
The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened, e.g., in form of lines and spaces pattern, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.