Resist Topcoat Composition for EUV Lithography SLO Defect Removal
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Solution Overview
Problem
In the semiconductor industry, extreme ultraviolet (EUV) lithographic techniques face challenges with single line open (SLO) defects, which lower yield and affect pattern resolution, especially when using photoresist patterns with high-resolution requirements.
Innovation Solution
A resist topcoat composition comprising an acrylic polymer with a hydroxy and fluorine structural unit, a mixture of sulfonic acid and carboxylic acid compounds, and an ether-based solvent is used, allowing for effective removal of SLO defects without damaging the photoresist pattern, improving yield and resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If EUV lithographic technique is used to achieve high-resolution patterns, then pattern resolution is improved, but single line open (SLO) defects occur randomly due to photon shot noise
Solution Approach 1:
A topcoat layer is introduced as an intermediary between the photoresist and the underlying layer. This topcoat, comprising specific polymers and acid compounds, mediates the interaction during EUV lithography to suppress photon shot noise effects and prevent SLO defects while preserving the high-resolution patterning capability
Solution Approach 2:
The topcoat is formulated as a composite material containing multiple components: a polymer component (with specific functional groups), sulfonic acid compounds, and carboxylic acid compounds in controlled ratios. This composite structure provides both the resolution enhancement and defect suppression properties
2Reliability
If a topcoat composition is applied to remove SLO defects, then yield is improved, but the composition must not damage the photoresist pattern
Solution Approach 1:
The topcoat composition parameters are precisely controlled, including the weight ratios of sulfonic acid to carboxylic acid compounds (1:0.1 to 1:50) and the molecular weight of the polymer (1,000 to 50,000 g/mol). These parameter optimizations ensure the topcoat effectively removes SLO defects through controlled chemical reactions while maintaining selectivity to avoid photoresist damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist topcoat composition effectively removes SLO defects while maintaining high-resolution patterns, enhancing process economy and yield by utilizing a simple solvent with low reactivity, ensuring minimal impact on the photoresist and facilitating easy removal of defects.
Implementation Method 1
an acrylic polymer including a structural unit containing a hydroxy group and a fluorine
Implementation Method 2
a mixture including a sulfonic acid compound containing at least one fluorine and a carboxylic acid compound containing at least one fluorine
Data Source
AI summary
A resist topcoat composition includes an acrylic polymer including a structural unit containing a hydroxy group and a fluorine; a mixture including a sulfonic acid compound containing at least one fluorine and a carboxylic acid compound containing at least one fluorine in a weight ratio of about 1:0.1 to about 1:50; and a solvent. A method of forming patterns uses the resist topcoat composition to form a topcoat over a patterned substrate.