Resist Topcoat Composition for EUV Single Line Open Suppression

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Solution Overview

Problem

Lithographic techniques in semiconductor manufacturing face challenges with single line open (SLO) defects due to photon shot noise when using extreme ultraviolet (EUV) as a light source, leading to reduced yield and pattern integrity issues.

Innovation Solution

A resist topcoat composition comprising an acrylic copolymer with specific structural units, an acid compound, and a solvent is used to form high-resolution patterns while effectively removing SLO defects through a simple process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If EUV lithography is used to achieve high-resolution patterns, then pattern resolution is improved, but single line open (SLO) defects occur due to photon shot noise

Engineering Contradiction:

Improvepattern resolutionVSAvoidpattern defect rate

Core Design Contradiction:

Manufacturing precisionVSReliability

Solution Approach 1:

A topcoat layer is introduced as an intermediary between the photoresist and the substrate. This topcoat serves as a mediator that absorbs excess energy and stabilizes the pattern formation process, thereby reducing SLO defects while maintaining high-resolution patterning capability

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent uses a composite material system consisting of a photoresist layer combined with a topcoat layer. The topcoat is formulated with specific polymers and additives that work synergistically with the photoresist to improve pattern fidelity and reduce defects during EUV lithography processing

Inventive Principle:

Principle #40Composite materials

2Reliability

If complex defect removal processes are implemented, then SLO defects are reduced, but process complexity and manufacturing cost increase

Engineering Contradiction:

Improvepattern defect rateVSAvoidprocess complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The topcoat is applied in advance before the main lithography process to prevent SLO defects from occurring in the first place. This preliminary protective action eliminates the need for complex post-processing defect removal steps, simplifying the overall manufacturing process

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition enhances pattern resolution and yield by minimizing SLO defects, maintaining fine pattern integrity, and improving process economy through efficient defect removal.

Implementation Method 1

when a photoresist is patterned using extreme ultraviolet (EUV) as a light source

Methodology Applied

Scientific EffectPhotoacid generation: Photoionisation

Implementation Method 2

a resist topcoat composition including an acrylic copolymer including a first structural unit represented by Chemical Formula M-1 and a second structural unit represented by Chemical Formula M-2; an acid compound; and a solvent

Methodology Applied

Scientific EffectDissolution: Solvation

Data Source

PatentUS12590221B2Resist topcoat composition, and method of forming patterns using the composition

Publication Date: 2026.03.31 SAMSUNG SDI CO LTD

AI summary

A resist topcoat composition and a method of forming patterns using the resist topcoat composition. The resist topcoat composition includes an acrylic copolymer including a first structural unit represented by Chemical Formula M-1, and a second structural unit represented by Chemical Formula M-2; an acid compound; and a solvent