Resist Treatment Liquid Defect Reduction
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Solution Overview
Problem
Current treatment liquids for resist films in semiconductor manufacturing fail to effectively reduce defects and bridge defects in fine patterns, particularly when using actinic ray-sensitive or radiation-sensitive resin compositions, as they do not adequately address the solubility and residue issues during development and rinsing processes.
Innovation Solution
A treatment liquid comprising a combination of two or more organic solvents with boiling points between 120° C. and 155° C., where one solvent constitutes at least 45% of the liquid, and a solubility parameter (SP) value of 17.0 to 18.2 MPa1/2, is used to enhance solubility and reduce residue formation, thereby minimizing defects and bridge defects during pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional treatment liquids are used for developing and rinsing resist films, then the processing can be completed, but defects and bridge defects occur in fine patterns due to insufficient solubility and residue formation
Solution Approach 1:
The patent changes the chemical parameters of the treatment liquid by specifying a particular solvent composition ratio (first organic solvent 10-50 mass%, second organic solvent 50-90 mass%) and solubility parameter range (16.0-18.2 MPa^1/2). This parameter optimization improves the solubility of the resist film, enabling complete dissolution without residue formation, thereby eliminating defects and bridge defects in fine patterns while maintaining high manufacturing precision
Solution Approach 2:
The patent employs a composite organic solvent system combining two different organic solvents with complementary properties. The first organic solvent provides base solubility while the second organic solvent enhances dissolution capability and reduces surface tension. This composite approach creates a treatment liquid that effectively removes resist material without leaving residues, thus preventing defects and improving pattern quality
2Object-generated harmful factors
If the solubility of the treatment liquid is increased to reduce residues, then residue formation decreases, but the treatment liquid may cause excessive dissolution or loss of pattern definition
Solution Approach 1:
The patent precisely controls the solubility parameter of the treatment liquid within the range of 16.0-18.2 MPa^1/2 and optimizes the solvent composition ratios. This controlled parameter change achieves sufficient solubility to eliminate residues while maintaining selective dissolution that preserves pattern definition. The balanced composition ensures complete resist removal without excessive etching or pattern loss
Solution Approach 2:
The treatment liquid acts as an intermediary substance with specifically tuned chemical properties. By adjusting the solvent composition and solubility parameter, the treatment liquid mediates between the resist film and the substrate, achieving complete dissolution of the resist material without affecting the underlying structure. This intermediary action eliminates residues while maintaining pattern integrity and definition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed treatment liquid significantly reduces defect generation and bridge defects by improving solubility and preventing residue re-adhesion, leading to higher quality pattern formation and lithography performance.
Implementation Method 1
a treatment liquid including two or more organic solvents... treating the exposed resist film with a treatment liquid to form a pattern
Implementation Method 2
preventing residue re-adhesion during drying
Data Source
AI summary
An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can accomplish suppression of generation of defects on a pattern and reduction in bridge defects of the pattern at the same time. The pattern forming method of an embodiment of the present invention is a pattern forming method by forming a resist film on a substrate using a resist composition including at least a resin whose polarity increases by the action of an acid, a photoacid generator, and a solvent, exposing the resist film, and then treating the exposed resist film with a treatment liquid to form a pattern, in which the treatment liquid includes two or more organic solvents, a boiling point of at least one organic solvent of the two or more organic solvents is 120° C. to 155° C., a content of the organic solvent having a boiling point of 120° C. to 155° C. is 45% by mass or more with respect to the total mass of the treatment liquid, and a difference between the boiling point of the organic solvent having the highest boiling point and the boiling point of the organic solvent having the lowest boiling point among the two or more organic solvents is less than 49° C.