Resist Trimming Composition for Lithography Resolution
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Solution Overview
Problem
Current resist trimming methods do not adequately optimize lithography properties, particularly in the combination of resist materials and trimming agents, leading to suboptimal results in forming finer patterns with advanced exposure light sources.
Innovation Solution
A method involving the formation of a positive resist film, exposure, alkali development, application of a resist trimming composition with an acid component, heating to change solubility, and development with an organic solvent to remove alkali-insoluble regions, ensuring improved lithography properties post-trimming.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional resist material and trimming agent combination is used, then the resist pattern can be formed, but the lithography properties (resolution and sensitivity) are insufficient for advanced exposure light sources
Solution Approach 1:
The invention changes the chemical parameters of the resist material by introducing a specific base material component that exhibits changed solubility under acid action, and optimizes the acid-generator component to generate acid upon exposure. This parameter optimization enables the resist material to achieve high resolution and sensitivity compatible with advanced exposure light sources like KrF and ArF excimer lasers
Solution Approach 2:
The invention uses a composite resist material system consisting of a base material component (exhibiting changed solubility under acid action) and an acid-generator component (generating acid upon exposure). This composite structure enables the resist to achieve both high lithography properties and compatibility with advanced exposure sources by combining the functional benefits of different material components
2Manufacturing precision
If a resist trimming agent is applied to improve pattern fineness, then the pattern resolution is enhanced, but the formed resist pattern may be impaired or the trimming agent may not coat well
Solution Approach 1:
The invention applies local quality by creating an alkali-insoluble region on the surface of the resist pattern through selective acid action. This localized modification allows the trimming agent to act only on specific regions (the alkali-insoluble surface layer) without affecting the overall integrity of the resist pattern, enabling precise pattern fineness improvement while maintaining pattern reliability
3Manufacturing precision
If the resist material is optimized for high resolution, then finer patterns are achieved, but the sensitivity to exposure light sources may be reduced
Solution Approach 1:
The invention uses preliminary action by pre-forming an alkali-insoluble region on the surface of the resist pattern through acid action before the trimming process. This preliminary modification enhances the pattern's resistance to trimming agents while maintaining high exposure sensitivity, allowing the resist material to respond strongly to exposure light sources while achieving fine pattern resolution
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances lithography properties by optimizing the resist pattern formation and trimming process, enabling the creation of finer patterns with improved resolution and sensitivity to advanced exposure light sources.
Implementation Method 1
a base material component which exhibits changed solubility in a developing solution under the action of acid and an acid-generator component which generates acid upon exposure
Implementation Method 2
a step C in which the first resist pattern coated with the resist trimming composition is heated and the solubility of the first resist pattern in a developing solution is changed under action of acid
Data Source
AI summary
A method of trimming a resist pattern, including forming a positive resist film on a substrate, the positive resist film is exposed and the positive resist film is subjected to an alkali development to form a first resist pattern having an alkali-insoluble region on the surface thereof; applying a resist trimming composition including an acid to the substrate on which the first resist pattern is formed; a heating the first resist pattern coated with the resist trimming composition, and the solubility of the first resist pattern in a developing solution is changed under action of the acid included in the resist trimming composition; and developing the first resist pattern after heating with an organic solvent to remove the alkali-insoluble region of the first resist pattern, the resist trimming composition including the acid and a solvent which does not dissolve the first resist pattern.