Resist Underlayer Composition for Fine Pattern Adhesion and Sensitivity
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving ultra-fine patterning with thin resist layers that maintain adhesion to photoresist, uniform thickness, and high refractive index while ensuring adequate etch resistance and sensitivity to exposure light sources.
Innovation Solution
A resist underlayer composition comprising specific polymers and compounds, such as those represented by Chemical Formulas 1 to 4, along with solvents, enhances adhesion and sensitivity, improving patterning performance and energy efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the photoresist layer thickness is reduced for ultra-fine patterning, then the pattern size is improved, but the adhesion to substrate deteriorates
Solution Approach 1:
A resist underlayer is introduced as an intermediary between the photoresist layer and substrate. This underlayer has specific properties (refractive index 1.5-1.7, thickness 5-20 nm) that enable it to mediate between the thin photoresist layer and substrate, providing mechanical support and adhesion while allowing the photoresist to maintain its reduced thickness for ultra-fine patterning
Solution Approach 2:
The patent uses composite material structure consisting of multiple layers with different properties: the photoresist layer for patterning, the resist underlayer for adhesion and mechanical support, and the substrate. Each layer is optimized for its specific function, allowing the system to achieve ultra-fine patterns while maintaining overall structural integrity
2Stability of the object's composition
If the resist underlayer thickness is reduced, then the photoresist pattern stability is improved, but the etch resistance deteriorates
Solution Approach 1:
The patent optimizes the resist underlayer thickness to a specific range (5-20 nm) and controls its refractive index (1.5-1.7) to achieve the right balance. This parameter optimization allows the underlayer to be thin enough to prevent photoresist pattern collapse while maintaining sufficient etch resistance for the etching process
3Manufacturing precision
If the photoresist layer thickness is reduced, then the pattern resolution is improved, but the sensitivity to exposure light deteriorates
Solution Approach 1:
The resist underlayer acts as an optical intermediary that enhances the sensitivity of the thin photoresist layer to exposure light. By optimizing its refractive index (1.5-1.7), the underlayer improves light interaction with the photoresist, compensating for the reduced photoresist thickness and maintaining adequate sensitivity for pattern formation
Solution Approach 2:
The patent changes optical parameters of the resist underlayer, specifically controlling its refractive index within 1.5-1.7 and thickness within 5-20 nm. These parameter changes optimize the optical interaction between exposure light and the photoresist layer, enhancing sensitivity despite the reduced photoresist thickness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition provides a resist underlayer with improved sensitivity to exposure light, enhanced adhesion to photoresist, and better patterning performance, ensuring stability and uniformity in fine patterning processes.
Implementation Method 1
The resist underlayer should have a high refractive index and low extinction coefficient for the light used in photolithography
Implementation Method 2
The resist underlayer should not collapse the photoresist pattern even if it is thin, should have good adhesion to the photoresist
Data Source
AI summary
Disclosed are a resist underlayer composition, and a method of forming a photoresist pattern using the resist underlayer composition. The resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1 or Chemical Formula 2, a compound represented Chemical Formula 3 or Chemical Formula 4, or a combination thereof, and a solvent.