Resist Underlayer Composition for Amine-Blocking Lithography

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Solution Overview

Problem

Existing resist compositions face challenges in maintaining high resolution when used on substrates containing nitrogen atoms, as amine components diffuse from the substrate, leading to a decrease in photoresist pattern accuracy over time.

Innovation Solution

A resist underlayer film-forming composition incorporating a polymer with a polycyclic aromatic structure and a crosslinking agent is used to form an underlayer film, which suppresses the diffusion of amine components and maintains resist resolution even after a predetermined period.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a conventional resist composition is used on a nitrogen-containing substrate, then the initial resist resolution is acceptable, but the resist resolution decreases over time due to amine component diffusion from the substrate

Engineering Contradiction:
Improveresist resolutionVSAvoidtime stability of resist resolution
Core Design Contradiction:
Manufacturing precisionVSDuration of action of stationary object

Solution Approach 1:

An underlayer film is introduced as an intermediary between the nitrogen-containing substrate and the resist composition. This underlayer film acts as a barrier that prevents amine components from diffusing from the substrate to the resist, thereby maintaining resist resolution over time. The underlayer film is formed using a polymer with polycyclic aromatic structure and a crosslinking agent, creating a protective interface that isolates the resist from harmful substrate components.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The underlayer film is constructed as a composite material system combining a polymer with polycyclic aromatic structural units and a crosslinking agent. This composite structure provides enhanced stability and effectiveness in preventing amine diffusion compared to single-material approaches. The crosslinked network structure of the composite material creates a more robust barrier against chemical diffusion.

Inventive Principle:
Principle #40Composite materials

2Adaptability or versatility

If the substrate contains nitrogen atoms, then the substrate can be used for semiconductor manufacturing, but amine components diffuse from the substrate causing decrease in photoresist pattern accuracy

Engineering Contradiction:
Improvesubstrate usabilityVSAvoidphotoresist pattern accuracy
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The underlayer film serves as a mediating layer that allows the nitrogen-containing substrate to be used while preventing the harmful interaction between substrate amine components and the photoresist. This intermediary layer enables substrate versatility while protecting pattern accuracy by blocking the diffusion path of amine components.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Manufacturing precision

If a polymer with polycyclic aromatic structure and crosslinking agent is used to form an underlayer film, then resist resolution is maintained over time, but the composition complexity increases

Engineering Contradiction:
Improveresist resolution stabilityVSAvoidcomposition structure
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The polymer is designed with specific structural parameters - incorporating polycyclic aromatic structural units that provide the necessary barrier properties. The crosslinking agent is selected to achieve optimal crosslink density and network structure. By carefully controlling these compositional parameters, the underlayer film achieves effective amine diffusion blocking with a relatively simple two-component system.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition effectively prevents a decrease in resist resolution on nitrogen-containing substrates, ensuring high accuracy of photoresist patterns even after several days, by using a polymer with polycyclic aromatic structures and a crosslinking agent to stabilize the film.

Implementation Method 1

amine components may diffuse from the substrate

Methodology Applied
Scientific EffectDiffusion: Diffusion

Implementation Method 2

a crosslinking agent, the polymer having a structural unit (A) having a polycyclic aromatic structure

Methodology Applied
Scientific EffectCrosslinking: Chemical Bonding

Data Source

PatentEP4711850A1Resist underlayer film-forming composition
Publication Date: 2026.03.18 NISSAN CHEM CORP
  • EP4711850A1 patent drawing
  • EP4711850A1 patent drawing
  • EP4711850A1 patent drawing

AI summary

The present invention relates to a resist underlayer film-forming composition for forming, in lithography using a photoresist film or an electron beam resist film, an underlayer film of the resist film on a nitrogen atom-containing substrate, the resist underlayer film-forming composition including: a polymer; and a crosslinking agent, the polymer having a structural unit (A) having a polycyclic aromatic structure.