Resist Underlayer Composition for EUV Lithography
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Solution Overview
Problem
In EUV lithography, conventional resist underlayer films with thicker film thicknesses result in increased Line Width Roughness (LWR) due to reduced film thickness, which worsens the variations in line width of the resist pattern formed.
Innovation Solution
A resist underlayer film-forming composition comprising a polymer and a compound with an amino group protected by a tert-butoxycarbonyl (Boc) group and an unprotected carboxyl group, in a specific proportion, is used to form a thin resist underlayer film, reducing LWR and improving pattern rectangularity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the film thickness of the resist underlayer film is reduced, then the optical performance for EUV exposure is improved, but the coating difficulty increases and uniformity deteriorates
Solution Approach 1:
The invention modifies the chemical parameters of the film-forming composition by including a compound with specific functional groups (Boc-protected amino group and unprotected carboxyl group). This parameter change improves coating properties and uniformity even at film thicknesses of 20 nm or less, while maintaining the optical performance required for EUV exposure
Data Source
AI summary
There is provided a composition that a resist pattern having a reduced LWR representing variations in line width of the resist pattern, compared to conventional resist patterns, can be formed. A resist underlayer film-forming composition for lithography comprising a polymer, 0.1 to 30 parts by mass of a compound having an amino group protected with a tert-butoxycarbonyl group and an unprotected carboxyl group, or a hydrate of the compound, relative to 100 parts by mass of the polymer, and a solvent.