Resist Underlayer Composition for Semiconductor Patterning
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Solution Overview
Problem
As semiconductor patterns become increasingly finer, the resist underlayer must be thin to prevent pattern collapse, while maintaining good adhesion to the photoresist and achieving uniform thickness, high refractive index, low extinction coefficient, and a faster etch rate than the photoresist layer.
Innovation Solution
A resist underlayer composition is developed, comprising a polymer with a structural unit represented by Chemical Formula 1, which improves adhesion and prevents pattern collapse by enhancing crosslinking characteristics and coating uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the resist underlayer thickness is reduced to prevent pattern collapse, then pattern stability is improved, but adhesion to photoresist deteriorates
Solution Approach 1:
The patent modifies the chemical composition parameters of the resist underlayer by incorporating specific polymers with carboxyl groups and controlling the content of high refractive index materials. This chemical parameter adjustment enhances adhesion strength without requiring increased thickness, thus maintaining pattern stability while improving bonding to the photoresist layer.
Solution Approach 2:
The patent creates a composite resist underlayer material combining multiple polymer components (including polymers with carboxyl groups and other functional polymers) with high refractive index materials. This composite structure provides both strong adhesion properties and sufficient mechanical support for thin photoresist patterns, resolving the contradiction between thinness and adhesion.
2Reliability
If the resist underlayer thickness is reduced, then pattern collapse is prevented, but coating uniformity deteriorates
Solution Approach 1:
The patent adjusts the molecular weight parameters and chemical composition of the polymer materials to optimize coating flow characteristics. By controlling polymer molecular weight within specific ranges and adjusting solvent content, the formulation achieves better levelness and uniformity even at reduced thicknesses, preventing pattern collapse while maintaining coating quality.
Solution Approach 2:
The patent enhances the formulation with specific additives and polymer components that improve local coating characteristics. The composite material composition provides localized optimization of flow and leveling properties, ensuring uniform thickness distribution across the substrate surface while maintaining the overall thin profile needed to prevent pattern collapse.
3Productivity
If the etch rate is increased, then pattern formation ability is improved, but adhesion to photoresist deteriorates
Solution Approach 1:
The patent applies different functional materials at different locations within the resist underlayer structure. The formulation includes polymer components with carboxyl groups that provide strong adhesion to photoresist, while also incorporating high refractive index materials that enable fast etching. This spatial and functional differentiation allows simultaneous achievement of strong adhesion and high etch rate.
Solution Approach 2:
The patent develops a composite resist underlayer material that combines polymers with carboxyl groups (for adhesion) with high refractive index materials (for etch rate). This composite formulation achieves both strong photoresist adhesion and fast etching performance, resolving the contradiction between these two critical properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist underlayer composition achieves improved adhesion, prevents pattern collapse, and provides an excellent etch rate and pattern formation ability, even during fine patterning processes.
Implementation Method 1
improving crosslinking characteristics and coating uniformity
Implementation Method 2
high refractive index
Implementation Method 3
low extinction coefficient for the light used in photolithography
Data Source
AI summary
Disclosed are a resist underlayer composition, and a method of forming a pattern using the resist underlayer composition. The resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent. The definitions of Chemical Formula 1 are as described in the specification.