Resist Underlayer Composition for Thin-Film Pattern Collapse Resistance
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Solution Overview
Problem
The semiconductor industry faces challenges in forming ultra-fine patterns with thin resist layers that require good adhesion, uniform thickness, high refractive index, low extinction coefficient, and fast etch rates, while preventing pattern collapse during fine patterning processes.
Innovation Solution
A resist underlayer composition comprising specific structural units and polymers, including heterocyclic groups with nitrogen atoms, is used to form a dense ultra-thin film with improved adhesion and etch selectivity, enhancing light absorption and energy efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the resist underlayer thickness is reduced to enable ultra-fine patterning, then the manufacturing precision is improved, but the pattern collapse resistance deteriorates
Solution Approach 1:
The patent changes the chemical composition parameters of the resist underlayer by incorporating specific heterocyclic groups (Formula 1) with nitrogen atoms and carbonyl groups. This chemical parameter change enables the thin underlayer to maintain sufficient mechanical strength and adhesion to prevent pattern collapse while preserving the thinness required for ultra-fine patterning.
Solution Approach 2:
The patent creates a composite resist underlayer system combining multiple functional components: the heterocyclic polymer (Formula 1), additional structural units (Formulas 2-6), and specific additives. This composite approach allows the underlayer to simultaneously achieve thinness for precision patterning and enhanced mechanical properties for collapse prevention.
2Manufacturing precision
If the resist underlayer thickness is reduced, then the manufacturing precision is improved, but the adhesion to photoresist deteriorates
Solution Approach 1:
The patent modifies the chemical parameters of the underlayer by incorporating heterocyclic groups with nitrogen atoms and carbonyl groups that form strong chemical bonds. This chemical parameter change enables the thin underlayer to maintain high adhesion strength to the photoresist layer, preventing delamination even at reduced thickness.
Solution Approach 2:
The heterocyclic polymer acts as an intermediary layer between the substrate and the photoresist. Its specific chemical structure (Formula 1) provides both strong bonding to the substrate and excellent adhesion to the photoresist, serving as a mediator that maintains bond strength despite the reduced thickness.
3Use of energy by moving object
If the resist underlayer has high refractive index and low extinction coefficient, then the light absorption is improved, but the etch rate may be affected
Solution Approach 1:
The patent optimizes the optical parameters of the resist underlayer by selecting specific heterocyclic groups and structural units that provide high refractive index and low extinction coefficient. This parameter optimization enhances light absorption efficiency for the photolithography process while the accompanying chemical structure modifications ensure fast etch rates are maintained.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition prevents pattern collapse and improves sensitivity to exposure light sources, resulting in enhanced patterning performance and energy efficiency.
Implementation Method 1
improves sensitivity to an exposure light source
Data Source
AI summary
A resist underlayer composition, a method of forming a pattern using the resist underlayer composition are provided. The resist underlayer composition includes solvent and a polymer including a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, and a structural unit represented by Chemical Formula 3.