Resist Underlayer Composition for EUV Lithography
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Solution Overview
Problem
The semiconductor industry faces challenges in forming ultra-fine patterns with high resolution due to limitations in existing resist underlayer compositions, particularly in achieving uniform coating and preventing defects during high-temperature processes.
Innovation Solution
A resist underlayer composition incorporating a polymer with specific structural units represented by Chemical Formulas 1 and 2, which includes both nucleophile and electrophile moieties, minimizing the need for additional cross-linking agents and enhancing stability and etch rates, is developed. This composition is combined with solvents and optional additives like acryl resins or thermal acid generators to improve coating uniformity and prevent delamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If existing resist underlayer compositions are used, then the coating process is simpler, but coating uniformity deteriorates and defects increase during high-temperature processes
Solution Approach 1:
The patent uses a composite polymer structure containing both nucleophilic groups (Formula 2) and electrophilic groups (Formula 1) within the same polymer chain. This intramolecular cross-linking capability eliminates the need for separate cross-linking agents while providing excellent coating uniformity and high-temperature stability, directly resolving the contradiction between coating quality and composition complexity.
2Reliability
If additional cross-linking agents are added to improve stability, then etch resistance improves, but the number of process steps and potential defects increase
Solution Approach 1:
The polymer contains both nucleophilic and electrophilic functional groups that enable self-cross-linking without requiring external cross-linking agents. This self-service mechanism forms a stable cross-linked network structure that provides etch resistance and process stability while eliminating the harmful effects of additional chemicals and process steps.
Solution Approach 2:
The patent merges the functions of the polymer backbone, cross-linking agent, and etch resistance provider into a single molecular structure. The nucleophilic and electrophilic groups within the same polymer molecule perform multiple functions simultaneously, reducing the number of components and minimizing defect generation.
3Productivity
If conventional polymers are used, then the composition is easier to manufacture, but etch rates are too slow for ultra-fine patterning
Solution Approach 1:
The patent modifies the polymer structure by introducing specific nucleophilic and electrophilic functional groups that enable rapid cross-linking and enhance etch resistance. This structural parameter change allows the polymer to achieve high etch rates suitable for ultra-fine patterning while maintaining reasonable manufacturability through controlled polymerization reactions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides excellent coating uniformity, high refractive index, and fast etch rates, enabling the formation of ultra-fine patterns with reduced defect rates and improved gap-fill and planarization characteristics, suitable for EUV lithography processes.
Implementation Method 1
a polymer comprising a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2, wherein the structural unit of Chemical Formula 1 includes a group having an electrophile, and the structural unit of Chemical Formula 2 includes a group having a nucleophile
Data Source
AI summary
A resist underlayer composition and a method of forming patterns, the composition including a solvent; and a polymer that includes a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2,