Resist Underlayer Composition for Fine Patterning
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Solution Overview
Problem
In the semiconductor industry, as patterns become increasingly finer, the resist underlayer must be thin to prevent resist pattern collapse while maintaining uniform thickness, adhesion, and sensitivity to exposure light.
Innovation Solution
A resist underlayer composition is developed, comprising a polymer with specific structural units, a compound represented by Chemical Formula 3, and a solvent, which improves adhesion and sensitivity, preventing pattern collapse even in fine patterning processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the resist underlayer thickness is reduced to prevent pattern collapse in fine patterning, then the risk of resist pattern collapse decreases, but the adhesion and uniformity of the resist underlayer deteriorate
Solution Approach 1:
The patent changes the chemical composition parameters of the resist underlayer by incorporating specific polymers (polymer A and polymer B) with defined weight ratios (95:5 to 50:50), and adding compound 3 at concentrations of 1-30 wt%. These parameter changes enable the formation of uniform thin films (10-50 nm thickness) with adequate adhesion while preventing pattern collapse in fine patterning processes.
Solution Approach 2:
The patent creates a composite resist underlayer material combining multiple polymers (polymer A and polymer B) with compound 3. This composite formulation synergistically improves both the adhesion properties and film uniformity, allowing the resist underlayer to maintain structural integrity at reduced thicknesses required for fine patterning applications.
2Reliability
If the resist underlayer thickness is reduced, then the pattern collapse risk decreases, but the sensitivity to exposure light deteriorates
Solution Approach 1:
The patent modifies the optical parameters of the resist underlayer by incorporating compound 3, which appears to enhance light absorption or interaction. This allows thinner resist underlayers (10-50 nm) to maintain adequate sensitivity to exposure light, resolving the contradiction between reduced thickness and improved sensitivity.
3Reliability
If the resist underlayer thickness is reduced, then the pattern collapse risk decreases, but the adhesion between resist and resist underlayer deteriorates
Solution Approach 1:
The patent changes the chemical composition parameters by incorporating specific polymers (polymer A and polymer B) with functional groups that enhance adhesion, and compound 3 at optimized concentrations (1-30 wt%). These compositional changes enable thin resist underlayers to maintain strong adhesion to the underlying layer while preventing pattern collapse.
Solution Approach 2:
The composite formulation combining polymer A, polymer B, and compound 3 creates synergistic adhesion properties. This composite material structure provides both the mechanical stability needed to prevent pattern collapse and the chemical adhesion properties required for strong bonding, even at reduced thicknesses.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition provides a resist underlayer with improved adhesion, sensitivity to exposure light, and enhanced patterning performance and energy efficiency, preventing pattern collapse in fine patterning processes.
Implementation Method 1
improved sensitivity to an exposure light source
Data Source
AI summary
Disclosed are a resist underlayer composition, and a method of forming a pattern using the resist underlayer composition. The resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, or a combination thereof, a compound represented by Chemical Formula 3, and a solvent. The definitions of Chemical Formula 1 to Chemical Formula 3 are as described in the specification.(R1)x(R2)y(R3)Sn—(R4)(3-x-y) Chemical Formula 3