Resist Underlayer Composition for Semiconductor Pattern Formation
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Solution Overview
Problem
Current lithographic techniques face challenges in forming fine patterns with excellent profiles, particularly in ultra-fine semiconductor technology, as they struggle to provide adequate chemical resistance, heat resistance, and etch resistance during multiple etching processes.
Innovation Solution
A resist underlayer composition is developed, comprising a compound with a specific metal-containing group and solvent, which is applied using a spin-on-coating method, heat-treated to form a resist underlayer, and used in conjunction with a photoresist layer to improve etch resistance and chemical resistance, while also enhancing optical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a photoresist layer is used alone for pattern formation, then the process is simple, but the pattern profile quality deteriorates in ultra-fine dimensions
Solution Approach 1:
The single photoresist layer is segmented into two functional layers: a photoresist layer for pattern definition and a resist underlayer (hardmask) for etch resistance. This segmentation allows each layer to specialize in its function, improving pattern profile quality while keeping the overall process manageable.
Solution Approach 2:
The resist underlayer acts as an intermediary between the photoresist layer and the material layer. It receives the pattern from the photoresist and transfers it to the material layer through selective etching, while providing the necessary etch resistance during the etching process.
2Manufacturing precision
If a resist underlayer is added for improved pattern transfer, then pattern profile quality improves, but process complexity increases
Solution Approach 1:
The resist underlayer is designed to perform multiple functions simultaneously: providing etch resistance during etching processes, serving as a pattern transfer medium, and offering chemical resistance during development. This multi-functionality reduces the need for additional specialized layers, thereby limiting the increase in process complexity.
3Strength
If conventional resist underlayer materials are used, then etch resistance is provided, but chemical resistance and optical properties are insufficient
Solution Approach 1:
The resist underlayer is formulated as a composite material containing a polymer component and a metal oxide component. This composite structure provides etch resistance from the metal oxide while the polymer matrix offers chemical resistance and appropriate optical properties, achieving a balance of all required properties.
Solution Approach 2:
The composition parameters of the resist underlayer are optimized by controlling the weight ratios of polymer to metal oxide (1:99 to 50:50) and the thickness (50-200 nm). These parameter changes allow tuning of etch resistance, chemical resistance, and optical properties to meet the requirements of ultra-fine pattern formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist underlayer composition effectively improves etch resistance, chemical resistance, and optical properties, enabling the formation of high-quality patterns suitable for semiconductor integrated circuit devices.
Implementation Method 1
heat-treated to form a resist underlayer
Implementation Method 2
applied using a spin-on-coating method
Data Source
AI summary
Disclosed is a resist underlayer composition including a compound including a moiety represented by the following Chemical Formula 1 and a solvent.In the above Chemical Formula 1, A1 to A3, X1, X2, L1, L2, Z, and m are the same as defined in the specification.