Resist Underlayer Composition Defect Reduction
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Solution Overview
Problem
The formation of coating films in semiconductor production often results in microdefects due to microparticles generated during the formation of silicon-containing resist underlayer films, which hinders the creation of favorable resist patterns.
Innovation Solution
A silicon-containing resist underlayer film-forming composition comprising polysiloxane, a glycol compound with a normal boiling point of 230.0°C or higher, and a solvent, along with optional components like nitric acid, pH adjusters, and surfactants, is used to reduce microdefect occurrence.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a polysiloxane-based resist underlayer film-forming composition is used, then the film can provide good antireflection properties and adhesion, but coating defects and microdefects occur during film formation
Solution Approach 1:
The patent changes the chemical parameters of the composition by introducing a specific glycol compound (Formula 1) with high boiling point (230.0°C or higher) and controlled molecular structure (n ≥ 3). This parameter change modifies the evaporation characteristics and film formation behavior, reducing microdefect generation while maintaining film stability and antireflection properties.
Solution Approach 2:
The patent creates a composite film-forming composition combining polysiloxane (A), the specific glycol compound (B), and solvent (C). This composite formulation leverages the complementary properties of each component: polysiloxane provides film stability and antireflection, the glycol compound suppresses microdefect formation, and the solvent enables proper coating flow and drying characteristics.
2Ease of manufacture
If conventional solvents are used in the composition, then the coating process is simple, but microparticles are generated during film formation causing coating defects
Solution Approach 1:
The patent modifies the solvent selection criteria by specifying a normal boiling point of 230.0°C or higher for the glycol compound and controlling the ratio of glycol compound to total composition mass at less than 1%. These parameter changes optimize the evaporation rate and reduce microparticle generation during coating, maintaining process simplicity while improving coating quality.
3Manufacturing precision
If the glycol compound content is increased to reduce microdefects, then coating quality improves, but the composition complexity and cost increase
Solution Approach 1:
The patent applies partial action by specifying that the glycol compound (B) is contained in an amount of less than 1% by mass relative to the total mass of the composition. This small but sufficient addition achieves effective microdefect reduction without requiring large quantities of the specialized compound, thus avoiding excessive formulation complexity and cost.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively minimizes microdefect generation during film formation, enhancing the stability of the resist underlayer film and enabling further miniaturization in lithographic processes.
Implementation Method 1
a glycol compound having a normal boiling point of 230.0° C. or higher
Data Source
AI summary
A resist underlayer film-forming composition capable of reducing occurrence of defects caused by microparticles or the like that may be generated during formation of a coating film. A silicon-containing resist underlayer film-forming composition including: [A]a polysiloxane; [B] a glycol compound having a normal boiling point of 230.0° C. or higher and being of the following Formula (1):(wherein R1 and R2 are each independently a hydrogen atom, a C1-4 alkyl group, or a C3-4 acyl group; and n is an integer of 3 or more); and [C] a solvent (except for a compound corresponding to the compound [B]).