Resist Underlayer Composition for High Dry-Etch Patterning
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Solution Overview
Problem
Existing resist underlying films do not achieve a high enough dry etching rate, leading to issues such as undercut and footing in resist patterns, which hinder the precise processing of semiconductor substrates.
Innovation Solution
A resist underlying film-forming composition is developed using a specific epoxy addition product formed by reacting a nitrogen-containing heterocyclic compound with a glycidyl ester group and an epoxy addition product-forming compound, such as a carboxylic acid, to enhance the dry etching rate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a conventional resist underlying film-forming composition is used, then the film can be easily formed by applying and curing the composition, but the dry etching rate is not high enough
Solution Approach 1:
The patent introduces a novel compound with specific chemical structure (formula 1) containing heteroatoms (N, O, S) and changes the chemical composition parameters of the resist underlying film-forming composition. This chemical parameter change enables the film to achieve high dry etching rate while maintaining ease of formation through simple application and curing processes
Solution Approach 2:
The patent creates a composite material system by combining the novel compound (formula 1) with other components including polymer compounds and solvents. This composite composition achieves synergistic effects where the heteroatom-containing compound provides high dry etching rate while the polymer matrix ensures easy film formation and curing
2Manufacturing precision
If the dry etching rate of the resist underlying film is increased, then finer microfabrication can be achieved, but resist patterns may develop undercut or footing profiles causing collapse
Solution Approach 1:
The patent optimizes the chemical composition parameters by incorporating the novel compound (formula 1) with specific heteroatom content and molecular structure. This parameter optimization enables the resist underlying film to provide appropriate etch selectivity that maintains vertical sidewalls in resist patterns, preventing undercut and footing while enabling high-precision microfabrication
Solution Approach 2:
The patent introduces a compound with specific local chemical properties (heteroatom distribution in formula 1) that creates localized regions of high etch resistance. This local quality enhancement at the molecular level provides differential etching behavior that maintains pattern fidelity and prevents resist pattern collapse during the etching process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enables a resist underlying film with a significantly higher dry etching rate, allowing for finer microfabrication of semiconductor substrates by reducing resist film thickness and preventing pattern collapse.
Implementation Method 1
reacting a nitrogen-containing heterocyclic compound having a glycidyl ester group (such as isocyanuric acid) and an epoxy addition product-forming compound, such as a carboxylic acid
Data Source
AI summary
A resist underlayer film having a particularly high dry etching rate; a resist underlayer film-forming composition; a resist pattern forming method; and a semiconductor device production method. The resist underlayer film-forming composition contains a solvent and an epoxy adduct obtained by reacting a compound represented by formula (1) and an epoxy adduct-forming compound. The epoxy adduct-forming compound is one or more compounds selected from the group made of carboxylic acid-containing compounds, carboxylic anhydride-containing compounds, hydroxy group-containing compounds, thiol group-containing compounds, amino group-containing compounds, and imide group-containing compounds.