Resist Underlayer Composition for EUV Lithography
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving effective lithographic techniques for ultra-fine pattern manufacturing, particularly in ensuring the resist underlayer composition's coating properties, adherence, and chemical resistance, especially when using high-energy radiation sources like EUV and electron beams.
Innovation Solution
A resist underlayer composition is developed, comprising a polymer with specific terminal and main chain structural units, including thiol ether bonds and heterocycloalkylene backbones, which enhances coating uniformity, adhesion, and etch selectivity, along with a solvent system that optimizes film density and planarization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a resist underlayer is used to reduce diffused reflection and standing waves, then lithographic quality improves, but the complexity of the manufacturing process increases
Solution Approach 1:
A resist underlayer composition is introduced as an intermediary material between the photoresist layer and semiconductor substrate. This underlayer serves as a mediator that optimizes optical properties by controlling reflectance to reduce diffused reflection and standing waves, thereby improving lithographic pattern quality without requiring fundamental changes to the lithographic equipment or process
2Manufacturing precision
If the resist underlayer has optimal reflectance, then pattern formation quality improves, but adherence of the photoresist to the substrate deteriorates
Solution Approach 1:
The chemical composition parameters of the resist underlayer are optimized to achieve a balance between optical properties and adhesion. The underlayer contains specific polymer components and additives that modify its chemical and physical properties, enabling it to provide both the required reflectance control for pattern formation and sufficient adherence to prevent photoresist collapse during processing
Solution Approach 2:
The resist underlayer is formulated as a composite material system comprising multiple components including polymers, solvents, and functional additives. This composite structure allows simultaneous optimization of diverse properties: optical reflectance for lithographic quality, chemical composition for adhesion, and physical characteristics for etch selectivity and chemical resistance
3Manufacturing precision
If high energy ray sources like EUV are used, then fine pattern manufacturing capability improves, but pattern collapse increases due to reduced photoresist adherence
Solution Approach 1:
The resist underlayer acts as an intermediary support structure between the photoresist and substrate. It provides mechanical support to the photoresist layer during high-energy ray processing, preventing pattern collapse by enhancing adherence while allowing the photoresist to maintain its lithographic functionality under EUV or electron beam exposure
4Reliability
If the resist underlayer is optimized for adhesion, then pattern collapse is reduced, but etch selectivity and chemical resistance deteriorate
Solution Approach 1:
The chemical composition parameters of the resist underlayer are precisely controlled to achieve a balance between adhesion and etch selectivity. By adjusting the types and concentrations of polymer components and functional additives, the underlayer provides sufficient adherence to prevent pattern collapse while maintaining adequate etch selectivity to allow subsequent etching processes to proceed effectively
Data Source
AI summary
A resist underlayer composition and a method of forming patterns using the same is disclosed. The resist underlayer composition includes a polymer including a structure represented by Chemical Formula 1 at the terminal end and a structural unit represented by Chemical Formula 2 and a structural unit represented by Chemical Formula 3 in the main chain; and a solvent. Definitions of Chemical Formula 1 to Chemical Formula 3 are the same as described in the detailed description.