Resist Underlayer Composition for EUV Patterning
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Solution Overview
Problem
In the semiconductor industry, existing resist underlayer compositions face challenges in achieving high resolution and preventing pattern collapse during fine patterning processes, especially when using short wavelength light sources or high energy rays, while also requiring improved sensitivity and reduced etching time.
Innovation Solution
A resist underlayer composition comprising specific polymers with structural units represented by Chemical Formulas 1, 2, 3, and 4, along with a solvent, which form a thin film to enhance adhesion, chemical resistance, and sensitivity to exposure light sources, thereby preventing pattern collapse and shortening etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a resist underlayer is used to improve sensitivity and prevent pattern collapse, then patterning performance is improved, but the underlayer adds complexity to the overall structure
Solution Approach 1:
The resist underlayer composition is designed to perform multiple functions simultaneously: it provides adhesion between the resist and substrate, offers chemical resistance during etching, enhances sensitivity to exposure light sources, and prevents pattern collapse. This multi-functionality resolves the contradiction by consolidating multiple required properties into a single material system, improving patterning performance without proportionally increasing structural complexity
Solution Approach 2:
The resist underlayer is formulated as a composite material containing specific polymers (with structures represented by Chemical Formulas 1-4), solvents, and crosslinking agents. This composite structure allows optimization of multiple properties simultaneously - the polymer backbone provides adhesion and mechanical strength, while functional groups enhance light sensitivity and chemical resistance, resolving the contradiction between reliability improvement and complexity management
2Productivity
If the underlayer is made thinner to reduce etching time, then productivity is improved, but adhesion and pattern stability may be compromised
Solution Approach 1:
The patent optimizes the thickness parameter of the resist underlayer to a specific range that balances etching time reduction with maintaining adequate adhesion and pattern stability. Additionally, the chemical composition parameters (polymer types, molecular weights, functional group concentrations) are adjusted to enhance performance per unit thickness, allowing thinner films to provide sufficient adhesion and stability while reducing overall etching time
Solution Approach 2:
The resist underlayer composition is designed with specific functional groups and polymer structures that concentrate adhesion-promoting and pattern-stabilizing properties at the interface regions where they are most needed. This local optimization of material properties allows the underlayer to be thinner overall while maintaining adequate adhesion and pattern stability at critical interfaces
3Manufacturing precision
If high energy rays are used to achieve fine patterning, then manufacturing precision is improved, but sensitivity through the underlayer becomes more critical and harder to maintain
Solution Approach 1:
The resist underlayer composition is specifically designed with polymers and functional groups that have high absorption coefficients for high energy radiation (such as EUV at 13.5 nm). The molecular weight, functional group density, and chemical composition are optimized to maximize sensitivity to these short wavelength light sources, allowing fine patterning to be achieved while maintaining adequate sensitivity through the underlayer
Solution Approach 2:
The patent formulates the resist underlayer as a composite material with specific polymers (having structures represented by Chemical Formulas 1-4) that contain functional groups particularly responsive to high energy radiation. This composite structure enhances the underlayer's sensitivity to short wavelength light sources and high energy rays, enabling fine patterning precision to be achieved while maintaining the necessary sensitivity through the underlayer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition improves patterning performance and efficiency by forming a dense, ultra-thin film with enhanced adhesion and chemical resistance, reducing pattern collapse and shortening etching time, while maintaining high film density and sensitivity to exposure light sources.
Implementation Method 1
improve sensitivity (e.g., the sensitivity of a resist) to an exposure light source
Implementation Method 2
a crosslinking agent... to thereby improve the adhesion between the photoresist and the underlayer
Implementation Method 3
in order to solve problems caused by diffuse reflection or standing waves of the activated radiation on the semiconductor substrate, a resist underlayer having a desired or optimized reflectance has been introduced
Data Source
AI summary
A resist underlayer composition includes (A) a polymer including a structural unit represented by Chemical Formula 1, a compound represented by Chemical Formula 2, or a combination thereof; (B) a polymer including a structure in which at least one moiety represented by Chemical Formula 3 or Chemical Formula 4 and a moiety represented by Chemical Formula 7 are bound to each other; and (C) a solvent: