Resist Underlayer Film Composition for High-Sensitivity EUV Patterning
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Solution Overview
Problem
Existing resist underlayer films face issues with intermixing with resist films and low sensitivity in forming fine patterns, especially under advanced lithography processes using EUV light or electron beams, leading to defects in semiconductor devices.
Innovation Solution
A resist underlayer film-forming composition comprising a polymer, a hydrophobic substituent-containing compound, and a solvent, optionally including a crosslinking agent and curing catalyst, which forms a cured resist underlayer film capable of high sensitivity pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional resist underlayer film is used, then the substrate is protected during lithography, but intermixing with the resist film occurs and sensitivity for fine pattern formation is low
Solution Approach 1:
The patent applies local quality by creating distinct chemical environments in different layers: the resist underlayer film uses polymers with specific functional groups (carboxyl, hydroxyl, or amine groups) that provide localized chemical properties different from the resist film above it. This local chemical differentiation prevents intermixing while maintaining the protective function, thereby improving pattern formation sensitivity without compromising layer stability.
Solution Approach 2:
The patent employs composite materials by formulating the resist underlayer film from specific polymer compositions (isocyanuric acid-based, polyester-based, acrylic-based, or polyether polymers) combined with particular solvents (alkylene glycol monoalkyl ethers or their monocarboxylic acid esters). This composite approach creates a material with optimized properties that simultaneously achieves high sensitivity and prevents intermixing with the resist film.
2Manufacturing precision
If advanced lithography processes (EUV, electron beam) are used, then fine processing capability is improved, but defects in resist pattern formation increase due to substrate influence
Solution Approach 1:
The patent implements the intermediary principle by introducing a specially formulated resist underlayer film as a mediator between the semiconductor substrate and the resist film. This intermediate layer, composed of specific polymers and solvents, buffers the harmful influence from the substrate (such as charge accumulation and stiction) while allowing the advanced lithography processes to achieve their full fine processing potential without pattern formation defects.
3Reliability
If a resist underlayer film is introduced to solve substrate influence, then pattern formation sensitivity improves, but the composition complexity increases
Solution Approach 1:
The patent applies parameter changes by systematically varying key compositional parameters of the resist underlayer film: selecting from four specific polymer types (isocyanuric acid-based, polyester-based, acrylic-based, polyether), choosing from two solvent categories (alkylene glycol monoalkyl ethers and their monocarboxylic acid esters), and controlling the functional group content (0.1-10 mmol/g). These parameter optimizations achieve high pattern formation sensitivity while maintaining relatively simple composition structures that are easier to manufacture than more complex alternatives.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of a resist underlayer film that allows for high sensitivity and precise pattern formation, reducing defects and improving semiconductor device manufacturing processes.
Implementation Method 1
a resist underlayer film-forming composition comprising a polymer (A), a hydrophobic substituent-containing compound (B), and a solvent (C)... which forms a cured resist underlayer film
Implementation Method 2
a hydrophobic substituent-containing compound (B)... capable of forming a resist underlayer film on which a fine resist pattern can be formed with high sensitivity
Data Source
AI summary
Provided is a resist underlayer film-forming composition including a polymer (A) a hydrophobic substituent-containing compound (B), and a solvent (C).