Resist Underlayer Composition for Solvent Resistance and EUV Sensitivity

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Solution Overview

Problem

Existing resist underlayer films face issues with intermixing with resist films and low sensitivity, particularly in advanced lithography processes using EUV light and electron beams.

Innovation Solution

A resist underlayer film-forming composition comprising a hydroxy group-containing polymer, a photoacid generator with a hydroxy group in its cationic part, and a crosslinking agent that reacts with hydroxy groups, enhancing solvent resistance and sensitivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional resist underlayer film is used, then the substrate is protected, but the film shows intermixing with the resist film and low sensitivity

Engineering Contradiction:

Improvesolvent resistanceVSAvoidpattern formation accuracy

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent uses a composite material system consisting of a polymer with hydroxy groups, a photoacid generator, and a crosslinking agent. This composite formulation creates a resist underlayer film that simultaneously achieves high solvent resistance through crosslinking and high sensitivity through the photoacid generator's ability to rapidly generate acid upon exposure, resolving the contradiction between reliability and manufacturing precision

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The patent changes the chemical parameters of the underlayer film by introducing specific functional groups (hydroxy groups that react with crosslinking agents) and optimizing the photoacid generator concentration. These parameter changes enable the film to achieve both high solvent resistance and high sensitivity, allowing precise pattern formation while maintaining film integrity

Inventive Principle:

Principle #35Parameter changes

2Stability of the object's composition

If the solvent resistance of the underlayer film is increased, then intermixing with resist film is prevented, but the sensitivity of the resist film decreases

Engineering Contradiction:

Improvesolvent resistanceVSAvoidsensitivity

Core Design Contradiction:

Stability of the object's compositionVSUse of energy by moving object

Solution Approach 1:

The patent introduces a crosslinking agent as an intermediary that reacts with hydroxy groups on the polymer chains to form a crosslinked network. This crosslinked structure provides solvent resistance as a mediator property, while the photoacid generator simultaneously provides sensitivity through acid generation upon exposure, allowing both properties to coexist without compromising either

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition enables improved solvent resistance and enhances sensitivity of the resist film, suitable for semiconductor processing.

Implementation Method 1

a photoacid generator (B) containing a hydroxy group in a cationic part

Methodology Applied

Scientific EffectPhotoacid generation: Photopolymerisation

Implementation Method 2

a crosslinking agent (C) that can react with a hydroxy group

Methodology Applied

Scientific EffectCrosslinking reaction: Chemical Bonding

Data Source

PatentUS20250348000A1Resist underlayer film-forming composition

Publication Date: 2025.11.13 NISSAN CHEM CORP

AI summary

A resist underlayer film-forming composition for EB or EUV lithography, the resist underlayer film-forming composition including: a hydroxy group-containing polymer; a photoacid generator containing a hydroxy group in a cationic part; a crosslinking agent that can react with a hydroxy group; and a solvent.