Resist Underlayer Film Composition with Liquid Additive
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Solution Overview
Problem
Conventional resist underlayer film compositions for semiconductor lithography require strong acid catalysts, leading to storage stability issues and contamination risks, while also struggling with filling holes and planarization on substrates with high aspect ratios.
Innovation Solution
A resist underlayer film forming composition comprising a resin, a liquid additive such as an aliphatic polyether compound, and a solvent, which forms a crosslinked structure without strong acid catalysts, allowing for effective filling and planarization of substrates with enhanced dry etching rates and reduced intermixing with photoresist layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If strong acid catalysts are used in resist underlayer film compositions, then crosslinking reaction efficiency is improved, but storage stability deteriorates and contamination risks increase
Solution Approach 1:
The patent extracts and removes the strong acid catalyst component from the resist underlayer film composition. Instead of using strong acid catalysts, the invention employs a catalyst-free crosslinking system that achieves effective crosslinking through alternative mechanisms, thereby eliminating the storage stability and contamination issues associated with strong acid catalysts while maintaining crosslinking efficiency.
Solution Approach 2:
The patent introduces a liquid additive as an intermediary substance that facilitates crosslinking without requiring strong acid catalysts. This liquid additive acts as a mediator that enables the crosslinking reaction to proceed efficiently under milder conditions, resolving the contradiction between reaction efficiency and storage stability.
2Strength
If conventional resist underlayer film compositions are used, then crosslinking is achieved, but filling and planarization capabilities on high aspect ratio substrates are insufficient
Solution Approach 1:
The patent changes the physical and chemical parameters of the composition by incorporating a liquid additive that modifies the rheological properties and reflow characteristics. This parameter change enables the composition to better fill high aspect ratio holes and achieve superior planarization while maintaining the crosslinked structure for etch resistance.
Solution Approach 2:
The patent creates a composite material system combining resin, liquid additive, and solvent that synergistically provides both crosslinking capability and improved filling/planarization performance. The liquid additive component specifically addresses the filling and planarization needs while the resin provides the crosslinking framework.
3Object-affected harmful factors
If organic reflection preventing films are applied to substrates with large aspect ratios, then reflection prevention is achieved, but filling characteristics and planarization characteristics deteriorate
Solution Approach 1:
The patent creates a multi-functional composition that simultaneously provides reflection prevention, filling, and planarization capabilities in a single layer. The liquid additive-enhanced composition can perform multiple functions that were previously required from separate materials, eliminating the need to choose between reflection prevention and filling/planarization performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition provides improved storage stability, reduced contamination, and enhanced filling and planarization capabilities, enabling the formation of high-quality photoresist patterns with increased dry etching rates and minimal intermixing with photoresist layers.
Implementation Method 1
forms a crosslinked structure without strong acid catalysts
Data Source
AI summary
To provide a resist underlayer film forming composition for lithography that is used in a lithography process for production of a semiconductor device. There is provided a resist underlayer film forming composition used in a lithography process for production of a semiconductor device, comprising a resin (A), a liquid additive (B) and a solvent (C). The liquid additive (B) may be an aliphatic polyether compound. The liquid additive (B) may be a polyether polyol, polyglycidyl ether or a combination thereof. Further, there is provided a method of manufacturing a semiconductor device, including the steps of forming a resist underlayer film by applying the resist underlayer film forming composition on a semiconductor substrate and by calcining the composition; forming a photoresist layer on the underlayer film; exposing the semiconductor substrate coated with the resist underlayer film and the photoresist layer to light; and developing the photoresist layer after the exposure to light.