Resist Underlayer Film Composition for Deep Pattern Etching
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Solution Overview
Problem
In the multilayer resist process for semiconductor devices, existing methods face challenges in forming a resist underlayer film with sufficient etching resistance and crack resistance, especially when deep patterns need to be transferred, as they often result in substrate warping and cracking during dry etching.
Innovation Solution
A resist underlayer film-forming composition is developed, comprising a polymer with a glass transition temperature of 0 to 180°C and an additional polymer with a glass transition temperature above 180°C, along with an acid generator and crosslinking agent, which is applied to a substrate, heated to form a film, and then used as a mask for dry etching, reducing residual stress and enhancing etching resistance and crack resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If a thick resist underlayer film is formed to enable deep pattern transfer, then the etching depth capability is improved, but substrate warping and cracking occur during dry etching
Solution Approach 1:
The patent applies parameter changes by carefully controlling the glass transition temperatures of polymers in the resist underlayer film-forming composition. By selecting polymers with specific Tg ranges (first polymer: 0-180°C, second polymer: >180°C), the film's mechanical properties are optimized to reduce residual stress during drying and etching processes, preventing substrate warping and cracking while maintaining sufficient thickness for deep pattern transfer
Solution Approach 2:
The patent uses composite materials by formulating the resist underlayer film with a combination of two different polymers having complementary properties. The first polymer (lower Tg) provides flexibility and stress relief, while the second polymer (higher Tg) contributes to etching resistance and structural stability. This composite approach creates a film that simultaneously achieves crack resistance and sufficient etching depth capability
2Reliability
If the resist underlayer film is made thinner to reduce substrate stress, then substrate warping is reduced, but etching resistance and crack resistance deteriorate
Solution Approach 1:
The patent applies parameter changes by optimizing the glass transition temperature parameters of the constituent polymers. The dual-polymer system with specific Tg ranges enables the film to maintain appropriate mechanical flexibility and stress distribution, achieving sufficient etching resistance and crack resistance even at reduced thicknesses that minimize substrate warping
Solution Approach 2:
The patent employs composite materials with two polymers having different Tg characteristics. The first polymer (0-180°C Tg) provides stress management and flexibility, while the second polymer (>180°C Tg) enhances etching resistance. This composite structure allows the film to achieve both warping resistance and adequate strength at optimized thicknesses
3Device complexity
If a single polymer is used in the resist underlayer film, then the composition is simple, but insufficient etching resistance and crack resistance are achieved
Solution Approach 1:
The patent applies composite materials by combining two polymers with different glass transition temperatures in the resist underlayer film-forming composition. The first polymer (Tg: 0-180°C) and second polymer (Tg: >180°C) work synergistically to provide both etching resistance and crack resistance, overcoming the limitations of single-polymer systems while maintaining reasonable compositional simplicity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively suppresses substrate warping, enhances etching resistance, and improves crack resistance, enabling the transfer of deep patterns without cracking, making it suitable for advanced semiconductor device production.
Implementation Method 1
a first polymer having a glass transition temperature of 0 to 180° C., and a second polymer having a glass transition temperature of more than 180° C.
Implementation Method 2
heating the resist underlayer film-forming composition at 180 to 350° C. to form a resist underlayer film
Implementation Method 3
heating the silicon-based oxide film-forming composition at 180 to 350° C. to form a silicon-based oxide film
Implementation Method 4
The silicon-based oxide film and the resist underlayer film are sequentially dry-etched using the resist pattern as a mask
Implementation Method 5
The substrate is dry-etched using the dry-etched resist underlayer film as a mask
Data Source
AI summary
A pattern-forming method includes providing a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a first polymer having a glass transition temperature of 0 to 180° C. A silicon-based oxide film is provided on a surface of the resist underlayer film. A resist pattern is provided on a surface of the silicon-based oxide film using a resist composition. The silicon-based oxide film and the resist underlayer film are sequentially dry-etched using the resist pattern as a mask. The substrate is dry-etched using the dry-etched resist underlayer film as a mask.