Resist Underlayer Film Composition for EUV Line Width Roughness
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Solution Overview
Problem
In semiconductor manufacturing, the formation of resist patterns with EUV exposure faces challenges such as pinholes, agglomeration, and line width roughness due to substrate and polymer influences, requiring a resist underlayer film that is insoluble in resist solvents, has a high dry etching rate, and improves adhesion and line width uniformity.
Innovation Solution
A resist underlayer film-forming composition comprising a solvent and a polymer or compound with specific structural formulas, including epoxy group-containing compounds, which form a uniform film with excellent adhesion and etching properties, minimizing line width roughness and pattern defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If a thin resist underlayer film is formed for EUV exposure, then the line width can be reduced to 32 nm or less, but pinholes and agglomeration occur due to substrate and polymer influences
Solution Approach 1:
The patent introduces a specifically designed polymer as an intermediary layer between the substrate and the resist film. This polymer contains aromatic rings with electron-withdrawing groups that mediate the interaction between the substrate and resist, preventing direct harmful interactions while maintaining film uniformity and enabling sub-32nm line width patterning.
Solution Approach 2:
The patent modifies the chemical parameters of the underlayer film by incorporating polymers with specific functional groups (electron-withdrawing groups like nitro, cyano, or carbonyl groups attached to aromatic rings). These parameter changes in the polymer structure alter the film's properties to prevent pinhole formation and agglomeration while maintaining thin film uniformity.
2Strength
If the resist underlayer film is made insoluble in resist solvent, then adhesion is improved, but the film becomes harder to process and remove
Solution Approach 1:
The patent applies local quality by designing a polymer with specific functional groups localized at particular positions in the molecule. The aromatic ring structure with electron-withdrawing groups provides localized regions of high polarity and adhesion strength at the substrate interface, while other portions of the molecule maintain appropriate solubility and processability characteristics.
Data Source
AI summary
A resist underlayer film formation composition including a solvent and a polymer or a compound including a structure represented by formula (100): (in formula (100), Ar represents an optionally substituted C6-40 aromatic ring group, L0 represents a single bond, an ester bond, an ether bond, an optionally substituted C1-10 alkylene group, or an optionally substituted C2-10 alkenylene group, T0 represents a single bond, an ester bond, an ether bond, an optionally substituted C1-10 alkylene group, or an optionally substituted C2-10 alkenylene group, provided that L0 and T0 are different, the n-number of R0 independently represent a hydroxy group, a halogen atom, a nitro group, a cyano group, an amino group, or a monovalent organic group, n represents an integer of 0-5, and * represents a binding moiety with a polymer or residue of the compound.