Resist Underlayer Film Composition for Semiconductor Etching
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Solution Overview
Problem
The multilayer resist process in integrated circuit production faces challenges in achieving high heat resistance and flexural resistance for resist underlayer films, leading to deformation and sublimation issues during dry-etching, which affects the yield of semiconductor device manufacturing.
Innovation Solution
A method and composition using a polymer with a specific structural unit, represented by formula (1), are employed to form a resist underlayer film, which includes a bivalent aromatic group and various linkages, enhancing heat resistance while maintaining high flexural resistance, and optionally includes a solvent, acid generating agent, and crosslinking agent to improve coating properties and prevent intermixing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional compositions for forming resist underlayer films are used, then the multilayer resist process can be performed, but the resist underlayer film exhibits insufficient heat resistance and flexural resistance, leading to deformation and sublimation during dry-etching
Solution Approach 1:
The patent changes the chemical composition parameters of the resist underlayer film by incorporating specific polymer structures (polycarbonate, polyacrylate, poly(meth)acrylate, or polymethacrylonitrile) with controlled glass transition temperatures (Tg ≥ 80°C). This parameter change directly improves heat resistance and flexural resistance, preventing deformation and sublimation during subsequent dry-etching processes while maintaining film formability.
Solution Approach 2:
The patent uses composite material strategies by combining specific polymer types with controlled molecular weights and glass transition temperatures. The composition includes polymers with Tg ≥ 80°C (such as polycarbonate, polyacrylate, poly(meth)acrylate, or polymethacrylonitrile) in amounts of 5-50 wt%, creating a composite resist underlayer film that simultaneously achieves high heat resistance, flexural resistance, and etching resistance without deformation or sublimation.
2Reliability
If the resist underlayer film structure is optimized for heat resistance, then sublimation is reduced, but manufacturing complexity increases due to multiple process steps
Solution Approach 1:
The patent achieves multi-functionality by designing a resist underlayer film composition that simultaneously provides heat resistance, flexural resistance, etching resistance, and good film formability through a single coating process. The specific polymer composition (Tg ≥ 80°C, molecular weight 10,000-1,000,000) performs multiple functions: preventing sublimation during heating, maintaining structural integrity during etching, and enabling proper pattern formation, thereby reducing the need for additional process steps.
3Manufacturing precision
If finer patterns are formed, then integration density increases, but pattern transfer performance and etching resistance require higher standards
Solution Approach 1:
The patent changes the physical and chemical parameters of the resist underlayer film, specifically controlling the glass transition temperature (Tg ≥ 80°C) and molecular weight (10,000-1,000,000) of the polymer. These parameter changes enhance the film's rigidity and thermal stability, enabling it to maintain fine pattern structures during etching processes while improving pattern transfer performance and etching resistance for higher integration density applications.
Data Source
AI summary
A method for forming a pattern includes providing a resist underlayer film on a substrate using a first composition for forming a resist underlayer film. The first composition includes a polymer having a structural unit represented by a following formula (1). In the formula (1), Ar1 and Ar2 each independently represent a bivalent group represented by a following formula (2). A resist coating film is provided on the resist underlayer film using a resist composition. A resist pattern is formed using the resist coating film. A predetermined pattern is formed on the substrate by sequentially dry-etching the resist underlayer film and the substrate using the resist pattern as a mask.