Resist Underlayer Film Composition for IC Pattern Transfer
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The multilayer resist process in integrated circuit production faces challenges in transferring fine patterns due to over-etching and bending of the resist underlayer film, which affects the accuracy and reproducibility of pattern transfer, especially when reducing pattern sizes.
Innovation Solution
A pattern-forming method that includes forming a resist underlayer film using a composition with a base component and a crosslinking agent having a specific partial structure, followed by an intermediate layer formation, exposure, development, and dry-etching using the resist pattern as a mask, to enhance etching resistance and prevent pattern bending.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the size of the etching pattern is reduced to achieve higher integration, then the degree of integration is improved, but the resist underlayer film becomes prone to over-etching and pattern bending
Solution Approach 1:
The patent changes the chemical composition parameters of the resist underlayer film by incorporating specific polymers (polyacrylonitrile, polyacrylic acid, polyvinyl alcohol) in controlled amounts (0.1-10% by weight) to modify etching resistance and prevent pattern bending during fine pattern transfer
Solution Approach 2:
The patent creates a composite resist underlayer film by combining traditional high carbon content materials with specific functional polymers, achieving both high etching selectivity and improved pattern stability during dry etching processes
2Manufacturing precision
If a high carbon content material is used for the resist underlayer film to improve etching selectivity, then pattern transfer accuracy is improved, but the film becomes susceptible to over-etching when pattern size is reduced
Solution Approach 1:
The patent modifies the chemical composition by adding specific polymers (polyacrylonitrile, polyacrylic acid, polyvinyl alcohol) to change the etching resistance characteristics of the high carbon content material, preventing over-etching while maintaining pattern transfer accuracy
Solution Approach 2:
The patent forms a composite structure combining high carbon content base material with functional polymer additives, achieving both high etching selectivity and enhanced resistance to over-etching in fine pattern processing
3Manufacturing precision
If the resist underlayer film is used as a photomask for fine pattern transfer, then the pattern transfer capability is improved, but the film pattern bends during etching
Solution Approach 1:
The patent changes the physical and chemical properties of the resist underlayer film by incorporating specific polymers that enhance structural stability, preventing pattern bending during dry etching while maintaining fine pattern transfer capability
Solution Approach 2:
The patent introduces specific polymers as intermediary substances that act as structural support within the resist underlayer film, preventing pattern bending during etching while allowing the film to function as an effective photomask
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves excellent etching resistance and pattern transfer capability, reducing the likelihood of underlayer film bending during dry etching, thereby improving the reproducibility and yield in microfabrication processes, particularly in integrated circuit device production.
Implementation Method 1
The resist underlayer film normally functions as an antireflective film that absorbs radiation reflected by the substrate
Implementation Method 2
The resist film is exposed by selectively applying radiation to the resist film
Implementation Method 3
The intermediate layer, the resist underlayer film, and the substrate are dry-etched using the resist pattern as a mask to form a given pattern on the substrate
Data Source
AI summary
A pattern-forming method includes forming a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a base component, and a crosslinking agent. A content of hydrogen atom in the resist underlayer film is from 0 to 50 atom %. The crosslinking agent has a partial structure represented by a following general formula (i). X represents an oxygen atom, a sulfur atom, or —NR—. R represents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms. n1 is an integer from 1 to 6. R1 represents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms.