Resist Underlayer Film Polymer Composition for Semiconductor Substrates
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Solution Overview
Problem
In the multilayer resist process for semiconductor device manufacturing, existing materials for resist underlayer films lack sufficient etching resistance, heat resistance, and bending resistance, which hinders the formation of desired patterns on semiconductor substrates.
Innovation Solution
A composition comprising a polymer with a specific repeating unit, represented by formula (1), and a solvent is applied to form a resist underlayer film, providing enhanced etching resistance, heat resistance, and bending resistance through the use of a divalent aromatic ring and a monovalent heteroaromatic ring with a sulfur atom, and a method for producing this polymer involves reacting specific compounds to achieve these properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If existing materials for resist underlayer films are used, then the manufacturing process is simple, but the etching resistance, heat resistance, and bending resistance are insufficient
Solution Approach 1:
The patent employs composite materials by combining a polymer main chain with specific aromatic ring structures (divalent aromatic ring in formula 1) and heteroaromatic ring groups (monovalent group with sulfur atom). This composite molecular structure integrates multiple functional groups that collectively provide enhanced etching resistance, heat resistance, and bending resistance, resolving the contradiction between material performance and structural simplicity.
Solution Approach 2:
The patent applies parameter changes by modifying the chemical structure parameters of the polymer, specifically incorporating aromatic rings with 10-40 ring atoms and heteroaromatic rings with sulfur atoms. These structural parameter changes directly improve the physical and chemical properties of the resist underlayer film, including etching resistance, heat resistance, and bending resistance, while maintaining a systematic approach to molecular design.
2Reliability
If a polymer with complex aromatic ring structure is used, then the resistance properties are improved, but the manufacturing complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the complex polymer structure into distinct functional segments: the divalent aromatic ring (formula 1) serving as the main chain structure and the monovalent heteroaromatic ring with sulfur atom as a substituent group. This segmented molecular architecture allows for systematic synthesis through stepwise chemical reactions, improving manufacturability while preserving the enhanced resistance properties provided by each functional segment.
Solution Approach 2:
The patent implements local quality by concentrating the performance-enhancing features (aromatic rings and heteroaromatic sulfur-containing groups) at specific local positions within the polymer structure. Rather than uniformly distributing complexity throughout the entire polymer, the specific repeating units with defined structural characteristics are placed at strategic locations, optimizing both performance and synthesis efficiency.
Data Source
AI summary
A composition includes: a polymer including a repeating unit represented by formula (1); and a solvent. In the formula (1), Ar1 is a divalent group including an aromatic ring having 10 to 40 ring atoms; and R0 is a monovalent group including a heteroaromatic ring which includes a sulfur atom as a ring-forming atom.