Resist Underlayer Film Composition for Semiconductor Trench Filling
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Solution Overview
Problem
In the multilayer resist process for semiconductor device production, existing resist underlayer films face challenges in achieving superior heat resistance and flatness, especially when forming patterns on substrates with varied trench aspect ratios, leading to sublimation issues and reduced production yield.
Innovation Solution
A composition for film formation comprising a specific compound represented by formula (1) and a solvent, which forms a resist underlayer film that exhibits enhanced heat resistance and flatness, satisfying optical and etching resistance requirements, is applied to the substrate and baked to create a stable pattern-forming layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional resist underlayer film is formed using existing compositions, then the film formation process is simple, but the film exhibits poor heat resistance and flatness, leading to sublimation and adhesion issues during subsequent processing
Solution Approach 1:
The patent employs a composite material approach by combining a specific polymer compound (formula 1) with a boronic acid compound and solvent. This composite composition achieves superior heat resistance and film flatness while maintaining processability. The polymer provides structural integrity and thermal stability, the boronic acid compound enhances crosslinking and adhesion, and the solvent ensures proper film formation, collectively resolving the contradiction between reliability and complexity.
Solution Approach 2:
The patent utilizes parameter changes by carefully controlling the molecular weight, functional groups, and chemical structure of the polymer compound in formula (1). By optimizing parameters such as the type of aromatic rings, substituent positions, and molecular weight distribution, the composition achieves enhanced heat resistance and film uniformity without requiring overly complex processing conditions.
2Ease of manufacture
If the substrate is heated to high temperature (300-400°C) for CVD hard mask formation, then the hard mask can be formed, but the resist underlayer film components sublime and adhere to the substrate, deteriorating production yield
Solution Approach 1:
The patent applies preliminary anti-action by incorporating heat-resistant functional groups and crosslinking structures into the resist underlayer film composition before the CVD hard mask formation process. The boronic acid compound forms crosslinked networks that prevent component sublimation at high temperatures (300-400°C), thereby preventing adhesion issues and maintaining production yield while allowing hard mask formation to proceed.
Solution Approach 2:
The patent converts the potential harm of high-temperature processing into a benefit by designing a composition that undergoes controlled crosslinking at these temperatures. The heat that would normally cause sublimation and adhesion problems instead triggers beneficial crosslinking reactions that enhance film stability, adhesion, and heat resistance, thereby improving both ease of manufacture and productivity.
3Manufacturing precision
If the resist underlayer film is formed to fill trenches with varying aspect ratios, then complete trench filling is achieved, but maintaining uniform flatness across different trench geometries becomes difficult
Solution Approach 1:
The patent applies local quality by designing a composition that adapts its flow and curing characteristics to different trench geometries. The low-viscosity solvent and optimized polymer molecular weight enable the composition to flow into high-aspect-ratio trenches effectively, while the crosslinking mechanism ensures uniform flatness is achieved across varying trench profiles, resolving the contradiction between complete filling and uniform flatness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resulting resist underlayer film demonstrates superior heat resistance and flatness, preventing sublimation and adhering components, thus improving the production yield and enabling favorable pattern formation in semiconductor devices and aerospace applications.
Implementation Method 1
a composition for film formation includes a compound represented by formula (1); and a solvent
Implementation Method 2
applying the composition on an upper face side of a substrate to provide a coating film; and baking the coating film
Data Source
AI summary
A composition for film formation includes a compound represented by formula (1) and a solvent. In the formula (1), R1, R2 and R3 each independently represent a group represented by the formula (a). In the formula (a), RA represents a hydrogen atom, an aryl group, or an alkyl group unsubstituted or substituted with at least one of a hydroxy group and an aryl group. RB represents a single bond or an arylene group. A part or all of hydrogen atoms on an aromatic ring of the aryl group and the arylene group may be substituted with a halogen atom, a hydroxy group, an amino group, a sulfanyl group, or a monovalent organic group having 1 to 20 carbon atoms and not including an aromatic ring.