Resist Underlayer Film Composition for Semiconductor Pattern Reproducibility
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Solution Overview
Problem
Existing resist underlayer films for semiconductor manufacturing face challenges in achieving excellent adhesion to resist films, reproducibility of patterns, and resistance to alkaline liquids and oxygen during the removal process, while also requiring minimal thickness to prevent dimensional errors and maintain substrate integrity.
Innovation Solution
A composition comprising a hydrolyzate and/or condensate of silane compounds with unsaturated bonds, specifically formulated to enhance adhesion through π electron interaction, and optionally including acid-producing compounds activated by UV radiation or heat, is used to form a resist underlayer film that improves pattern reproducibility and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If the thickness of the resist film and antireflection film is reduced to accommodate pattern miniaturization, then the mask performance deteriorates and it becomes more difficult to provide substrates with desired microfabrication
Solution Approach 1:
The patent applies composite materials by combining silane compounds with unsaturated bonds (providing adhesion through π-electron interaction) with other functional components to create an underlayer film that achieves both thinness and high mask performance. The composite structure allows the film to be sufficiently thin for miniaturized patterns while maintaining excellent adhesion and etching resistance.
Solution Approach 2:
The patent changes the chemical composition parameters of the underlayer film by incorporating silane compounds with unsaturated bonds (vinyl, allyl, phenyl groups) that provide π-electron interaction for enhanced adhesion. This compositional parameter change enables the film to achieve high performance at reduced thickness, resolving the contradiction between thinness and mask performance.
2Ease of manufacture
If conventional silane compound compositions are used for the underlayer film, then the film can be formed, but adhesion to resist patterns deteriorates
Solution Approach 1:
The patent changes the chemical structure parameters of the silane compound by introducing unsaturated bonds (vinyl, allyl, phenyl groups) that provide π-electron interaction. This parameter change enhances adhesion strength to resist patterns while maintaining ease of film formation through hydrolysis and condensation reactions.
Solution Approach 2:
The patent uses composite materials by combining silane compounds with unsaturated bonds that provide adhesion functionality with other components that ensure easy film formation. The composite composition achieves both excellent adhesion through π-electron interaction and manufacturability through controlled hydrolysis and condensation.
3Manufacturing precision
If the underlayer film composition is adjusted to minimize reflectance, then the masking property improves, but storage stability as a solution deteriorates
Solution Approach 1:
The patent changes the compositional parameters by selecting specific silane compounds with unsaturated bonds that provide both low reflectance (good masking) and high storage stability. The molecular structure parameters of these silane compounds are optimized to prevent premature hydrolysis while achieving the desired optical and adhesive properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a resist underlayer film with enhanced adhesion, improved pattern reproducibility, and resistance to alkaline liquids and oxygen, ensuring reliable microfabrication processes while maintaining substrate integrity.
Implementation Method 1
a resist underlayer film made from a composition comprising a hydrolyzate and/or a condensate of a silane compound having an unsaturated bond can increase adhesion with a resist due to the Π electron interaction of the unsaturated bond
Implementation Method 2
it further preferably comprises an acid-producing compound which generates an acid by irradiation of ultraviolet radiation and/or by heating
Implementation Method 3
a composition comprising a hydrolyzate and/or a condensate of a silane compound
Implementation Method 4
a composition comprising a hydrolyzate and/or a condensate of a silane compound
Data Source
AI summary
A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen asking during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A),R1bR2cSi(OR3)4-a (A)wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.