Resist Underlayer Film Composition Balancing Strength and Gas Permeability
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Solution Overview
Problem
Current resist underlayer films for nanoimprinting lack both excellent processing resistance and high gas permeability, which are conflicting properties that are difficult to achieve simultaneously.
Innovation Solution
A composition for forming a resist underlayer film is developed, comprising a polyether compound with a specific repeating unit structure and an organic solvent. This polyether compound contains an aromatic ring for mechanical strength and ether groups to suppress close packing of aromatic rings, achieving both processing resistance and gas permeability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a hydrophobic film is used as underlayer film material to improve gas permeability, then gas permeability is improved, but processing resistance deteriorates
Solution Approach 1:
The patent applies local quality by creating different regions within the polymer chain structure: aromatic rings provide local regions of high density and strength for processing resistance, while ether groups create local regions of low density and high flexibility for gas permeability. This spatial differentiation of functional groups within the same polymer structure resolves the contradiction between strength and permeability.
Solution Approach 2:
The patent employs composite material principles by combining aromatic rings and ether groups within the same polymer chain to create a composite structure at the molecular level. The aromatic segments contribute mechanical strength and processing resistance, while the ether segments contribute flexibility and gas permeability, achieving both properties simultaneously in a single material system.
2Strength
If a highly crosslinked structure is formed to improve processing resistance, then processing resistance is improved, but gas permeability deteriorates
Solution Approach 1:
The patent applies parameter changes by carefully controlling the crosslinking degree within a specific range (5-50%) rather than forming highly crosslinked structures. This moderate crosslinking level provides sufficient processing resistance while maintaining enough free volume and chain mobility to preserve gas permeability, thus resolving the contradiction through optimization of the crosslinking parameter.
3Strength
If film density is increased to improve mechanical strength, then mechanical strength is improved, but gas permeability deteriorates
Solution Approach 1:
The patent applies local quality by creating heterogeneous density regions within the film: aromatic ring segments provide local high-density zones for mechanical strength, while ether group segments create local low-density zones for gas permeability. This spatial variation in density at the molecular level allows the film to simultaneously achieve both mechanical strength and gas permeability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resulting resist underlayer film exhibits excellent processing resistance, filling property, and flatness, while also having low film density and high gas permeability, making it suitable for fine patterning processes in semiconductor device manufacturing.
Implementation Method 1
it is possible to provide a resist underlayer film which has hardness and exhibits mechanical strength to withstand processing, has excellent filling property and flatness, and also has low film density and is expected to exhibit favorable gas permeability
Data Source
AI summary
The present invention is a composition for forming a resist underlayer film, containing: (A) a polyether compound containing a repeating unit represented by the following general formula (I); and (B) an organic solvent, where Ar1 represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or the like, R1 represents a substituted or unsubstituted, linear, branched, or cyclic, saturated or unsaturated divalent hydrocarbon group having 1 to 20 carbon atoms or a substituted or unsubstituted, linear, branched, or cyclic heteroalkylene group having 1 to 20 carbon atoms, and “n” and “m” each represent an integer of 0 or more. This can provide a composition for forming a resist underlayer film with which it is possible to form a resist underlayer film that exhibits excellent processing resistance and excellent gas permeability.