Resist Underlayer Film Composition for Heat Resistance and Flatness

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing resist underlayer films in semiconductor manufacturing lack sufficient heat resistance and flatness, which are crucial for advanced miniaturization processes.

Innovation Solution

A composition comprising a compound with an aromatic ring and a first polymer with specific structural units, applied to form a resist underlayer film, enhancing heat resistance and flatness through optimized polymer content and solvent selection.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional resist underlayer films are used, then the manufacturing process is simple, but the heat resistance and flatness are insufficient

Engineering Contradiction:
Improveheat resistanceVSAvoidcomposition complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent uses a composite polymer system comprising a first polymer with specific structural units (formula 1 and 2) and a second polymer, creating a resist underlayer film with enhanced heat resistance and flatness. The specific structural units including aromatic rings and hydroxy groups provide thermal stability while the composite nature allows optimization of both mechanical and thermal properties.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent specifies precise compositional parameters: the first polymer content is controlled at 10-80 mass% of total polymer, and the ratio of structural unit (1) to structural unit (2) is optimized. These parameter controls ensure sufficient heat resistance while maintaining film flatness and adhesion to the substrate.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If conventional resist underlayer films are used, then the formulation is simple, but the flatness is insufficient

Engineering Contradiction:
ImproveflatnessVSAvoidpolymer structure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent controls the content of structural unit (2) containing hydroxy groups at 20-80 mol% of total structural units in the first polymer. This parameter optimization provides sufficient hydrogen bonding for film flatness while preventing excessive crosslinking that would reduce adhesion. The second polymer content is also controlled at 20-90 mass% to balance flatness and adhesion properties.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The second polymer acts as an intermediary component that modifies the film-forming properties of the first polymer. It enhances film flatness and adhesion to the substrate while the first polymer provides the primary heat resistance. This intermediary role allows optimization of multiple properties simultaneously.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS12572075B2Composition, method of forming resist underlayer film, and method of forming resist pattern
Publication Date: 2026.03.10 JSR CORPORATION
  • US12572075B2 patent drawing
  • US12572075B2 patent drawing
  • US12572075B2 patent drawing

AI summary

A composition includes: a compound including an aromatic ring; and a first polymer including a first structural unit represented by formula (1) and a second structural unit represented by formula (2). A content of the first polymer with respect to 100 parts by mass of the compound is no less than 0.1 parts by mass and no greater than 200 parts by mass. R1 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group; and R2 represents a substituted or unsubstituted monovalent hydrocarbon group. R3 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group; L represents a single bond or a divalent linking group; Ar represents a group obtained by removing (n+1) hydrogen atoms from a substituted or unsubstituted aromatic ring; R4 represents a hydroxy group or a monovalent hydroxyalkyl group; and n is an integer of 1 to 8.