Resist Underlayer Composition Heterocyclic Epoxy Reaction
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Solution Overview
Problem
Current resist underlayer films in semiconductor manufacturing have limitations in achieving high dry etching rates, which hinders precise processing of semiconductor substrates and can result in resist pattern distortions and incomplete etching.
Innovation Solution
A resist underlayer film-forming composition is developed, comprising a reaction product of an epoxy group-containing compound and a heterocyclic compound with a site reactive to the epoxy group, specifically including compounds like glycidyl ester groups and nitrogen-containing heterocyclic compounds, to enhance the dry etching rate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a conventional resist underlayer film-forming composition is used, then the composition can be easily cured by heating, but the dry etching rate is insufficient
Solution Approach 1:
The patent uses a composite material system consisting of a polymer with disulfide bonds in the backbone combined with specific heteroatom-containing compounds. This composite approach allows the composition to maintain easy curability through the polymer's inherent properties while achieving high dry etching rates through the heteroatom-containing compounds' chemical structure, thus resolving the contradiction between ease of manufacture and productivity.
Solution Approach 2:
The patent changes the chemical parameters of the composition by introducing heteroatom-containing polymers and compounds with specific functional groups. This parameter change enables the composition to achieve both easy curing and high dry etching rate simultaneously, as the heteroatoms modify the etching characteristics without compromising the curing properties of the base polymer.
2Productivity
If the dry etching rate is increased by adding heteroatom-containing polymer, then etching performance improves, but the composition complexity increases
Solution Approach 1:
The patent employs heteroatom-containing polymers that serve multiple functions: they provide high dry etching rate due to heteroatom content, maintain solubility in appropriate solvents, and enable easy curing through the polymer's inherent reactivity. This multi-functionality reduces the need for additional separate additives, thereby limiting the increase in composition complexity while achieving improved etching performance.
3Productivity
If a resist underlayer film with high dry etching rate is formed, then etching selectivity improves, but resist pattern shape control becomes more difficult
Solution Approach 1:
The patent achieves local quality optimization by creating a resist underlayer film with heterogeneous chemical composition. The heteroatom-containing polymer segments provide high etching selectivity in specific regions, while the polymer matrix maintains overall film integrity and resist pattern shape. This local differentiation allows simultaneous achievement of high etching selectivity and good pattern shape control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves a higher dry etching rate, allowing for finer processing of semiconductor substrates and preventing resist film thinning, thereby improving the precision and efficiency of semiconductor manufacturing.
Implementation Method 1
a reaction product formed between an epoxy group-containing compound and a heterocyclic compound having one site reactive with an epoxy group
Implementation Method 2
it is necessary that the composition be easily cured by treatment such as heating
Data Source
AI summary
A resist underlayer film having an especially high dry etching rate; a composition for forming the resist underlayer film; a method for forming a resist pattern; and a method for producing a semiconductor device. The composition for forming the resist underlayer film has a solvent and a product of reaction between an epoxidized compound and a heterocyclic compound containing at least one moiety having reactivity with an epoxy group. It is preferable that the heteroring contained in the heterocyclic compound be selected from among furan, pyrrole, pyran, imidazole, pyrazole, oxazole, thiophene, thiazole, thiadiazole, imidazolidine, thiazolidine, imidazoline, dioxane, morpholine, diazine, thiazine, triazole, tetrazole, dioxolane, pyridazine, pyrimidine, pyrazine, piperidine, piperazine, indole, purine, quinoline, isoquinoline, quinuclidine, chromene, thianthrene, phenothiazine, phenoxazine, xanthene, acridine, phenazine, and carbazole.