Resist Underlayer Film Composition for Low-LWR EUV Lithography
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Solution Overview
Problem
The challenge in semiconductor manufacturing is the increase in line edge roughness (LER) and line width roughness (LWR) of resist patterns during EB or EUV lithography, which adversely affects device performance, and existing methods to address these issues have not been sufficient.
Innovation Solution
A composition for forming a resist underlayer film containing a film-forming component with specific structures, including an aromatic ring and a nitrogen atom, is used to improve LWR in EB or EUV lithography, comprising a polymer with specific groups bonded to these structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If pattern size is reduced to achieve finer patterns in semiconductor devices, then manufacturing precision is improved, but line width roughness (LWR) and line edge roughness (LER) increase
Solution Approach 1:
A resist underlayer film is introduced as an intermediary layer between the substrate and the resist pattern. This underlayer film, formed from a composition containing specific polymer structures (aromatic rings with nitrogen atoms), acts as a mediator that improves the uniformity of the resist pattern width and reduces LWR, enabling finer patterning with better quality
Solution Approach 2:
The invention uses a composite material approach by creating a resist underlayer film with specific molecular structures combining aromatic rings and nitrogen-containing groups. This composite structure provides both the necessary adhesion and the unique property of reducing LWR, allowing simultaneous achievement of fine pattern size and low roughness
2Object-generated harmful factors
If conventional resist materials and processes are used, then manufacturing simplicity is maintained, but line width roughness (LWR) increases
Solution Approach 1:
The resist underlayer film is formed in advance before the actual resist patterning process. This preliminary action prepares the surface with optimal properties for subsequent patterning, reducing LWR from the outset and preventing defects that would otherwise require additional corrective steps
Solution Approach 2:
The resist underlayer film serves as an intermediary that simplifies the overall process by providing a prepared surface that inherently reduces LWR, eliminating the need for complex post-processing steps or specialized resist formulations
Data Source
AI summary
A composition for forming a resist underlayer film for use in EB or EUV lithography, the composition containing a film-forming component and a solvent, wherein the film-forming component contains 20 mass % or more of a specific structure-containing component containing at least either of a first structure containing an aromatic ring and a second structure containing a nitrogen atom, the first structure contains a group represented by formula (1) below directly bonded to the aromatic ring, and the second structure contains a group represented by formula (1) below directly bonded to the nitrogen atom.In formula (1), R1 represents an alkylene group having 1 to 6 carbon atoms, R2 represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or an alkoxyalkyl group having 2 to 10 carbon atoms in total, and * represents a bond.