Resist Underlayer Composition for Low-LWR EUV Patterning
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Solution Overview
Problem
The formation of resist patterns in semiconductor manufacturing is hindered by the influence of semiconductor substrates, leading to issues such as intermixing with resist films, deterioration in line width roughness (LWR), and reduced sensitivity, especially with the use of advanced active rays like EUV light and EB.
Innovation Solution
A resist underlayer film-forming composition comprising a phenolic antioxidant with an aryl ring, a crosslinker-reactive polymer, a crosslinker, a curing catalyst, and a solvent, which forms a cured resist underlayer film that is not intermixed with the resist film and maintains a good rectangular shape while reducing LWR.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a resist underlayer film is provided between resist and semiconductor substrate, then intermixing between resist and substrate is prevented, but line width roughness (LWR) deteriorates
Solution Approach 1:
The patent changes the chemical parameters of the underlayer film by incorporating phenolic antioxidants with specific structures (7+ carbon atoms, aryl ring with phenolic hydroxy group) and controlling the crosslinking density through the ratio of crosslinker to polymer. This modifies the film's chemical composition and network structure to achieve both insolubility and smooth surface properties.
Solution Approach 2:
The underlayer film is formulated as a composite system containing multiple components: phenolic antioxidant (A), crosslinker-reactive polymer (B), crosslinker (C), and curing catalyst (D). This composite structure combines the insolubility provided by crosslinked phenolic networks with the surface smoothness contributed by the specific polymer matrix and antioxidant additives.
2Reliability
If a resist underlayer film is provided between resist and semiconductor substrate, then intermixing is prevented, but rectangular shape of resist pattern deteriorates
Solution Approach 1:
The patent optimizes physical parameters including film thickness (10-100 nm range), crosslinking density (controlled by component ratios), and surface energy (modified by phenolic antioxidant selection) to achieve rectangular pattern fidelity while maintaining intermixing prevention.
Solution Approach 2:
The underlayer film provides different local properties: high crosslinking density and chemical resistance at the interface with the semiconductor substrate to prevent intermixing, while maintaining appropriate surface energy and smoothness at the top surface to enable precise resist pattern formation with sharp rectangular edges.
3Reliability
If conventional resist underlayer composition is used, then substrate protection is achieved, but resist sensitivity is reduced
Solution Approach 1:
The patent modifies the chemical composition parameters by selecting specific phenolic antioxidants with 7 or more carbon atoms and aryl rings, which provide adequate substrate protection through crosslinking while maintaining resist sensitivity through appropriate surface properties and controlled crosslinking density.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition allows for the formation of resist patterns with improved rectangular shapes and reduced LWR, enhancing resist sensitivity and stability during semiconductor manufacturing processes.
Implementation Method 1
a phenolic antioxidant (A) having seven or more carbon atoms, and containing an aryl ring having a phenolic hydroxy group
Implementation Method 2
a crosslinker-reactive polymer (B); a crosslinker (C)
Implementation Method 3
a curing catalyst (D)
Data Source
AI summary
The present invention provides a resist underlayer film forming composition which makes it possible to suppress a deterioration of line width roughness (LWR) during the formation of a resist pattern without causing intermixture with a resist film formed on a resist underlayer film. Provided is a resist underlayer film forming composition comprising: (A) a phenol-based antioxidant which has a carbon number of seven or more and in which at least one of the carbon atoms at the ortho position and the para position of a phenolic hydroxy group on an aryl ring has a hydrogen atom that can be substituted; (B) a crosslinking agent-reactive polymer; (C) a crosslinking agent; (D) a curing catalyst; and (E) a solvent. Also provided are a resist underlayer film which is a cured product of a coating film made of the resist underlayer film forming composition and a method for producing a semiconductor device in which the resist underlayer film forming composition is used.