Resist Underlayer Film Composition for Low-Residue Etching
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Solution Overview
Problem
The generation of fine particulate etching residues during the etching of resist underlayer films using existing compositions reduces the yield of semiconductor elements.
Innovation Solution
A composition for forming a resist underlayer film containing a polymer with a specific structure and solvent, where the polymer has an average particle size of 50 nm or less, and a controlled ratio of repeating units, along with optional crosslinking agents and curing catalysts, is used to suppress the formation of fine particulate etching residues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a resist underlayer film is etched using existing compositions, then the etching process can be completed, but fine particulate etching residues are generated
Solution Approach 1:
The patent changes the molecular weight parameter of the polymer from conventional high molecular weight to specifically 10,000 or less. This parameter change fundamentally alters the polymer's physical properties, enabling complete etching without generating fine particulate residues while maintaining the resist underlayer film's functional properties
Solution Approach 2:
The patent uses a composite polymer composition consisting of a specific low molecular weight polymer (with molecular weight 10,000 or less) combined with a solvent and optionally a crosslinking agent. This composite material achieves both complete etchability and adequate film formation properties that neither component could achieve alone
2Manufacturing precision
If the polymer molecular weight is reduced to suppress etching residues, then fine particulate residues are reduced, but film formation ability may be compromised
Solution Approach 1:
The patent identifies a critical threshold parameter for molecular weight at 10,000 or less, below which the polymer achieves optimal balance between etchability and film formation. This specific parameter value ensures the polymer chains are short enough to be completely etched but long enough to form continuous films
Solution Approach 2:
The patent creates a composite system combining low molecular weight polymer with solvents and crosslinking agents. The crosslinking agent compensates for the reduced film-forming capability of low molecular weight polymer by creating a network structure, while the solvent ensures proper coating and film uniformity
Data Source
AI summary
A composition for forming a resist underlayer film containing a polymer having a first repeating unit represented by Formula (1) and a second repeating unit other than the first repeating unit, and a solvent, in which an average particle size of the polymer in a polymer solution containing the polymer is 50 nm or less. In Formula (1), R1 represents a hydrogen atom, a methyl group, or a halogen atom, and R2 represents a trivalent hydrocarbon group having 3 to 6 carbon atoms. Here, the lactone structure containing R2 is a 5-membered ring or a 6-membered ring.