Resist Underlayer Composition for Sub-20 Nm Pattern Rectangularity
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Solution Overview
Problem
In semiconductor manufacturing, the miniaturization of resist patterns to 20 nm or less requires improved pattern rectangularity to prevent trailing at the bottom of resist films, which existing methods struggle to achieve effectively.
Innovation Solution
A method involving a composition for forming a resist underlayer film, comprising a polymer, an acid generating agent, and a solvent, applied to a substrate, exposed to radiation, and developed, resulting in a film with enhanced pattern rectangularity suitable for advanced semiconductor device fabrication.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If existing resist underlayer film formation methods are used, then the resist pattern can be formed, but the pattern rectangularity is insufficient and trailing occurs at the bottom of resist films
Solution Approach 1:
The patent changes the chemical composition parameters of the resist underlayer film by incorporating specific additives (basic compounds, chiral compounds, or compounds with carbonyl groups) into the resist composition. These compositional parameter changes modify the film's interaction with the substrate and exposure light, thereby improving pattern rectangularity and preventing trailing without requiring fundamental process changes
Solution Approach 2:
The patent creates a composite resist underlayer film by combining the base resist polymer with functional additives (basic compounds, chiral compounds, or carbonyl-containing compounds). This composite structure integrates multiple functionalities: the base polymer provides film formation while the additives provide pattern rectification and trailing prevention, achieving superior pattern quality
2Length of moving object
If the film thickness is reduced to achieve finer patterns, then the pattern size is reduced, but the pattern rectangularity deteriorates and trailing increases
Solution Approach 1:
The patent modifies the chemical composition parameters of the resist underlayer film by incorporating specific additives that enhance pattern rectangularity control. These compositional changes allow the film to maintain better shape control even at reduced thicknesses, enabling fine pattern formation without sacrificing rectangularity
Solution Approach 2:
The patent introduces chiral compounds or compounds with specific functional groups as intermediary substances between the exposure light and the resist polymer. These intermediaries mediate the exposure process to improve pattern rectangularity and prevent trailing, enabling better control at thinner film dimensions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method efficiently produces semiconductor substrates with superior pattern rectangularity, enabling the manufacture of further microfabricated semiconductor devices by forming resist underlayer films that inhibit pattern trailing, thus ensuring high-quality semiconductor device production.
Implementation Method 1
an acid generating agent
Implementation Method 2
a solvent
Data Source
AI summary
A method for manufacturing a semiconductor substrate, includes: directly or indirectly applying a composition for forming a resist underlayer film to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing the exposed resist film. The composition for forming a resist underlayer film includes: a polymer; an acid generating agent; and a solvent. The resist underlayer film has a film thickness of 6 nm or less.