Resist Underlayer Polymer Composition for Lower EUV Exposure

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Solution Overview

Problem

EUV lithography faces challenges in securing adhesion of resist films without anti-reflection functions and achieving optimal exposure amounts while maintaining pattern shape and size uniformity, leading to reduced product yield and increased costs.

Innovation Solution

A polymer compound for resist underlayer films with specific repeating units, including halogen and hydroxyl groups, enhances EUV photon absorption, generating secondary electrons that improve adhesion and reduce optimal exposure amounts without affecting pattern shape.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the exposure amount of EUV resist film is reduced, then productivity is improved, but manufacturing precision deteriorates due to reduced surface roughness and size uniformity

Engineering Contradiction:
Improveexposure amountVSAvoidsurface roughness and size uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent modifies the chemical composition parameters of the resist underlayer film by incorporating specific polymers with carboxyl groups and controlling the content of aromatic rings. This parameter change enables the film to generate sufficient secondary electrons at lower exposure amounts, thereby maintaining manufacturing precision while improving productivity

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite resist underlayer system by combining specific polymers (with carboxyl groups and controlled aromatic ring content) with the resist film. This composite structure enhances electron generation efficiency, allowing reduced exposure amounts without compromising pattern quality

Inventive Principle:
Principle #40Composite materials

2Reliability

If adhesion of resist film is improved without anti-reflection function, then reliability is improved, but device complexity increases due to additional process requirements

Engineering Contradiction:
ImproveadhesionVSAvoidprocess complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent designs the resist underlayer film to perform multiple functions simultaneously: providing adhesion promotion and generating secondary electrons for resist pattern formation. By incorporating specific polymers with carboxyl groups, the single layer achieves both adhesion and electron generation functions, eliminating the need for separate anti-reflection layers and reducing overall process complexity

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The polymer compound maintains resist pattern film roughness and size uniformity at lower exposure amounts, improving adhesion and reducing costs through enhanced EUV photon absorption and secondary electron transfer.

Implementation Method 1

enhances EUV photon absorption, generating secondary electrons

Methodology Applied
Scientific EffectEUV photon absorption: Absorption (EM radiation)

Implementation Method 2

generating secondary electrons that improve adhesion

Methodology Applied
Scientific EffectSecondary electron generation: Photoelectric Effect

Data Source

PatentUS20260029716A1Polymer compound for forming resist underlayer film, and composition for forming resist underlayer film comprising same
Publication Date: 2026.01.29 DONGJIN SEMICHEM CO LTD
  • US20260029716A1 patent drawing
  • US20260029716A1 patent drawing
  • US20260029716A1 patent drawing

AI summary

A polymer compound for forming a resist underlayer film can lower the optimal exposure amount of a resist film without affecting the shape of the resist pattern film after development. The polymer compound for forming a resist underlayer film includes a repeating unit represented by the following formula: