Resist Underlayer Polymer for Planarization and Embeddability
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Solution Overview
Problem
In the lithography process for semiconductor device production, the formation of resist patterns with desired forms is hindered by standing waves caused by ultraviolet light reflection on substrate surfaces, and existing resist underlayer films fail to adequately planarize substrates with level differences and embed well into fine hole patterns.
Innovation Solution
A resist underlayer film-forming composition comprising a polymer with a specific unit structure, including arylene groups and a solvent, optionally with a crosslinker, acid, or acid generator, which provides excellent planarization performance and embeddability in fine hole patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist underlayer films (novolac resin, acrylic resin) are used, then the lithography process can be performed, but the wafer surface cannot be adequately planarized and the films fail to embed well into fine hole patterns
Solution Approach 1:
The patent changes the chemical composition parameters of the resist underlayer film by incorporating polymers with specific structures (polycarboxylic acid polymers, polyphenolic polymers, polyamino polymers) and controlling their molecular weights and functional groups to achieve both planarization and embeddability
Solution Approach 2:
The patent uses composite material formulation by combining multiple polymer types (polycarboxylic acid polymer, polyphenolic polymer, polyamino polymer) with specific weight ratios to achieve synergistic effects that improve both planarization performance and embeddability in fine hole patterns
2Length of moving object
If the resist layer thickness is reduced for miniaturization, then finer patterns can be achieved, but standing wave effects from substrate reflection worsen and pattern integrity deteriorates
Solution Approach 1:
The resist underlayer film acts as an intermediary layer between the substrate and resist layer, providing anti-reflective properties that suppress standing waves and improve pattern formation accuracy in miniaturized structures
Solution Approach 2:
The patent modifies the optical and physical parameters of the underlayer film through polymer selection and composition control to optimize light reflection suppression and pattern fidelity at reduced dimensions
Data Source
AI summary
A resist underlayer film-forming composition for lithography process having characteristics of enabling wafer surface planarization after film formation, excellent planarization performance on substrate with level difference, and good embeddability in fine hole pattern. The resist underlayer film-forming composition including polymer having unit structure of Formula (1) and solvent,wherein each of R1 to R4 is independently hydrogen atom or methyl group, and X1 is divalent organic group having at least one arylene group optionally substituted by alkyl group, amino group, or hydroxyl group, and wherein X1 in Formula (1) is organic group of Formula (2),wherein A1 is phenylene group or naphthylene group, A2 is phenylene group, naphthylene group, or organic group of Formula (3), and dotted line is bond, andwherein each of A3 and A4 is independently phenylene group or naphthylene group, and dotted line is bond.