Resist Underlayer Film Composition for Wet-Etch Removal
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Solution Overview
Problem
Conventional resist underlayer films face challenges in providing resistance to resist solvents and developers, particularly organic solvents and aqueous alkali solutions, while also requiring fast etching rates for removal by dry and wet etching processes without damaging the substrate.
Innovation Solution
A resist underlayer film-forming composition comprising a heterocyclic compound with a dicyanostyryl group, optionally containing a crosslinking agent and catalyst, which exhibits excellent resistance to organic solvents and aqueous alkali solutions, and is soluble only in wet etching chemicals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a resist underlayer film is designed to have excellent resistance to resist solvents and developers, then the film maintains integrity during exposure and development, but the film becomes difficult to remove by etching processes
Solution Approach 1:
The patent applies parameter changes by carefully selecting the epoxy functionality of the poly(epoxide) resin (specifically 2.0 to less than 10) and the molecular weight of the ARC binder to achieve the optimal balance. By controlling these parameters, the film forms a crosslinked structure that provides solvent resistance while maintaining etchability through proper network density
Solution Approach 2:
The patent uses composite materials by combining poly(epoxide) resin with specific epoxy functionality, ARC binder, and crosslinking agents to create a multi-component system. This composite structure allows the film to exhibit both solvent resistance and controlled etchability that neither component could achieve alone
2Productivity
If a resist underlayer film is designed to have fast etching rate for quick removal, then the productivity increases, but the film loses resistance to resist solvents and developers
Solution Approach 1:
The patent controls the epoxy functionality parameter within the specific range of 2.0 to less than 10, which optimizes the crosslinking density to provide both solvent resistance and adequate etchability. This parameter control prevents over-crosslinking that would make the film resistant to etching
3Reliability
If conventional poly(epoxide) resin with epoxy functionality of 2.0 to less than 10 is used, then the film provides good solvent resistance, but the etching rate is insufficient for efficient removal
Solution Approach 1:
The patent optimizes the epoxy functionality parameter to a specific range (2.0 to less than 10) that balances solvent resistance and etchability. This parameter optimization ensures the film forms an appropriate crosslinked network that resists solvents while remaining removable by etching processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enables a resist underlayer film that maintains integrity during exposure and development, allowing for efficient removal by wet etching without substrate damage, simplifying the process and reducing costs.
Implementation Method 1
the resist underlayer film is needed to have such antireflection performance that the film can suppress reflection from the substrate with respect to the radiation used in the lithography process
Implementation Method 2
the resist underlayer film is required to exhibit satisfactory solubility in the wet etching chemical liquid such that the resist underlayer film can be easily removed from the substrate
Data Source
AI summary
A resist underlayer film, which, while exhibiting excellent resistance to a resist developer which is a resist solvent or an alkaline aqueous solution, exhibits removability, and preferably solubility, only in wet etching chemicals. This composition for forming a resist underlayer film contains a solvent, a heterocyclic compound having a dicyanostyryl group, a cyclic compound including an amide group, for example, and the reaction product of a heterocyclic compound precursor having an epoxy group and an active proton compound, for example.