Resistance Change Element With Laminated Oxide Semiconductor Layers
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Solution Overview
Problem
Variable resistance elements in non-volatile memory require a high-voltage forming process to create a conductive filament, leading to uncontrollable filament size and position, which hinders power consumption reduction and miniaturization.
Innovation Solution
A resistance change element with a laminated structure of oxide semiconductor layers and electrodes, where the oxide semiconductor is in ohmic contact with both electrodes, eliminating the need for a forming process by allowing oxygen ions to be driven at a lower voltage, thus reducing power consumption and enabling miniaturization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a high-voltage forming process is used to create a conductive filament, then a lower resistance state is achieved, but the filament size and position become uncontrollable
Solution Approach 1:
The oxide semiconductor layer is divided into two distinct layers: a first oxide layer with higher resistivity and a second oxide layer with lower resistivity. This segmentation allows each layer to perform specific functions - the first layer provides oxygen reservoir while the second layer forms the conductive filament, enabling controlled filament formation without high-voltage forming.
Solution Approach 2:
Different regions of the oxide semiconductor structure are assigned different properties - the first oxide layer has higher resistivity and serves as an oxygen reservoir, while the second oxide layer has lower resistivity and serves as the filament formation region. This local differentiation enables precise control of filament position and size.
2Reliability
If a conductive filament is formed through high-voltage application, then resistance is reduced, but power consumption cannot be reduced
Solution Approach 1:
The structure is prepared in advance with a two-layer oxide configuration where oxygen ions are pre-positioned in the first oxide layer. This preliminary arrangement eliminates the need for high-voltage forming to create the conductive path, allowing direct operation at lower voltages and reducing power consumption from the outset.
Solution Approach 2:
The invention changes the resistivity parameter distribution within the oxide semiconductor by creating a two-layer structure with different resistivities. This parameter differentiation enables controlled ion transport at lower voltages, reducing the energy required for resistance switching operations.
3Reliability
If a conductive filament is formed in the oxide layer, then resistance changes are achieved, but element miniaturization becomes difficult
Solution Approach 1:
Dividing the oxide semiconductor into two functional layers allows the structure to maintain reliability with smaller dimensions. The segmented architecture enables precise control of the resistance switching mechanism within a compact footprint, facilitating element miniaturization while preserving the resistance change function.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution eliminates the need for high-voltage forming, reduces power consumption, and achieves uniform electrical characteristics, allowing for stable and miniaturized resistance change elements with controlled operation current.
Implementation Method 1
The oxide semiconductor has a first metal oxide layer and a second metal oxide layer... allowing oxygen ions to be driven at a lower voltage
Data Source
AI summary
To provide a resistance change element which does not require a forming process and enables reduction of power consumption and miniaturization of the element, and to provide a method for producing it. A resistance change element 1 according to an embodiment of the present invention includes a bottom electrode layer 3, a top electrode layer 5 and an oxide semiconductor layer 4. The oxide semiconductor layer 4 has a first metal oxide layer 41 and a second metal oxide layer 42. The first metal oxide layer 41 is formed between the bottom electrode layer 3 and the top electrode layer 5, and in ohmic contact with the bottom electrode layer 3. The second metal oxide layer 42 is formed between the first metal oxide layer 41 and the top electrode layer 5, and in ohmic contact with the top electrode layer 5.